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A semiconductor mode-locked laser with side-tunable gain/absorption regions

A technology for mode-locked lasers and absorption regions, which is applied in the direction of semiconductor lasers, lasers, laser components, etc., can solve problems such as adverse effects of device spectral characteristics and accuracy problems, and achieve high-quality ultrashort pulse output, compression width, The effect of simplifying the debugging of current and voltage complex

Active Publication Date: 2021-09-21
FUJIAN INST OF RES ON THE STRUCTURE OF MATTER CHINESE ACAD OF SCI
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

Although the photolithographic preparation process is already very fine, there are still certain precision problems, resulting in the formation of near-wavelength or sub-wavelength concave-convex structures on the side of the ridge when the ridge waveguide is fabricated.
These concave-convex structures will scatter or diffract light, which will adversely affect the spectral characteristics of the device.

Method used

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  • A semiconductor mode-locked laser with side-tunable gain/absorption regions
  • A semiconductor mode-locked laser with side-tunable gain/absorption regions
  • A semiconductor mode-locked laser with side-tunable gain/absorption regions

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0029] figure 1 A schematic diagram of a ridge waveguide is provided in which the side adjustable gain / absorption region is set at any position on one side of the ridge gain region, and the ridge gain region 101, the ridge wave conductive isolation region 105 and the ridge waveguide structure are sequentially formed on the ridge of the ridge waveguide structure. The ridge waveguide saturable absorption region 104, wherein the ridge wave conductive isolation region 105 separates the ridge gain region 101 and the ridge waveguide saturable absorption region 104 to form electrical isolation.

[0030] The ridge gain region 101 is strip-shaped, and the ridge wave conductive isolation region 105 is located at one end of the ridge gain region 101 along the length direction. End face 106 is coated with anti-reflection coating, such as anti-reflection coating reflectance is 5%; The end face 107 of one end far away from ridge wave conduction isolation region 105 is coated with the optica...

Embodiment 2

[0036] The difference between this embodiment and Embodiment 1 is that in Embodiment 1 only a section of side electrical isolation region 102 and side adjustable gain / absorption region 103 are set on one side of the ridge gain region, while in this embodiment On one side of the ridge gain area, a plurality of side electrical isolation areas and side adjustable gain / absorption areas are arranged. figure 2 An example of setting two side electrical isolation regions and a side adjustable gain / absorption region on one side of the ridge gain region is given.

[0037] The ridge gain region 201, the ridge waveguide isolation region 205 and the ridge waveguide saturable absorption region 204 are sequentially formed on the ridge of the ridge waveguide structure, wherein the ridge waveguide isolation region 205 separates the ridge gain region 201 and the ridge waveguide saturable absorption region 204 open to form electrical isolation.

[0038] The ridge gain region 201 is elongated, ...

Embodiment 3

[0047] The difference between this embodiment and Embodiment 1 is that in Embodiment 1 only a section of side electrical isolation region 102 and side adjustable gain / absorption region 103 are set on one side of the ridge gain region, while in this embodiment A section of side electric isolation area and a side adjustable gain / absorption area are arranged on both sides of the ridge gain area.

[0048] Such as image 3 As shown, the ridge gain region 301, the ridge waveguide isolation region 305 and the ridge waveguide saturable absorption region 304 are sequentially formed on the ridge of the ridge waveguide structure, wherein the ridge waveguide isolation region 305 connects the ridge gain region 301 and the ridge waveguide saturable absorption region 304 to form electrical isolation. The end face of the ridge gain region 301 along the length direction away from the end face of the ridge wave conductive isolation region 305 is the light output end 306, and the light output e...

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Abstract

The invention relates to a semiconductor mode-locked laser with side-adjustable gain / absorption region. The laser adopts a ridge waveguide structure, and a ridge gain region, a ridge wave conduction isolation region and a ridge waveguide are sequentially formed on the ridge of the ridge waveguide structure Saturable absorption region; forming a side adjustable gain / absorption region at any position on the side of the ridge gain region. The side adjustable gain / absorption area can be a gain area or an absorption area according to the applied voltage. The invention utilizes the light absorption characteristics of the side absorption region to reduce the scattering or diffraction of light by the concave-convex structure on the side of the ridge waveguide at the near-wavelength or sub-wavelength level; utilizes the saturated absorption characteristic of the side absorption region, The pulse width is effectively compressed; the output power of the optical pulse is increased by utilizing the gain amplification characteristic of the side ridge gain region. In this way, the output of high-quality ultrashort pulses of the mode-locked laser is realized, and at the same time, the requirements for the precision of the preparation process are appropriately reduced, and the complicated debugging of current and voltage during the performance test of the laser is simplified.

Description

technical field [0001] The invention relates to a semiconductor light-emitting device, in particular to a semiconductor mode-locked laser with side adjustable gain / absorption regions. Background technique [0002] There are multiple longitudinal modes in the laser at the same time, and the phases of these longitudinal modes are independent of each other, and the mode locking technology is to lock the phases of these longitudinal modes, so that the longitudinal modes are synchronized in time and the frequency interval is kept constant, so that the laser will output pulsed light. Semiconductor mode-locked lasers (MLLD) have the advantages of high repetition frequency, narrow pulse width, precise wavelength control, high conversion efficiency, good stability, simple driving power, small size, light weight, low power consumption, low price, and easy integration. , these advantages make semiconductor mode-locked lasers have become important light sources in the fields of optical...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01S5/065
CPCH01S5/0657
Inventor 徐玉兰林琦林中晞苏辉
Owner FUJIAN INST OF RES ON THE STRUCTURE OF MATTER CHINESE ACAD OF SCI