Test method for lateral insulated gate bipolar transistor interface state and five-port device

Abstract

The invention relates to a test method for a lateral insulated gate bipolar transistor interface state and a five-port device. The test method for the lateral insulated gate bipolar transistor interface state is characterized by comprising the following steps: testing charge pump current of a channel region, a beak region, a polysilicon gate field plate region and a field plate terminal region, when test is carried out, the five-port device is manufactured beside a target device on the same wafer, system building is carried out on an auxiliary five-port device, test conditions are set, and finally current test operation is carried out on the charge pump. The five-port device used for the test method for the lateral insulated gate bipolar transistor interface state is characterized by comprising one charge pump electron providing region and one test electrode specially used for the charge pump, and the charge pump electron providing region and an anode P+ region are arranged at the upper part of an N type buffer zone side by side and are connected with the test electrode specially used for the charge pump individually. The test method provided by the invention can solve the problem that the traditional method cannot test interface damage of the polysilicon gate field plate region and the field plate terminal region of the lateral insulated gate bipolar transistor.

Description

technical field [0001] The invention belongs to the reliability field of power semiconductor devices, and in particular relates to a method for testing the interface state of a lateral insulated gate bipolar transistor and a 5-port device. Background technique [0002] Lateral insulated gate bipolar transistor (lateral insulated gate bipolar transistor, LIGBT) is a composite power semiconductor device that combines bipolar transistors and metal oxide semiconductor field effect transistors. It has high breakdown voltage and output capability Strong and integratable features. A silicon on insulator (SOI) process has the advantages of small parasitic capacitance, good isolation performance, and high integration. Therefore, LIGBT devices based on SOI technology are widely used in the field of power integrated circuits. However, due to the high-temperature, high-voltage, and high-power operating conditions of SOI-LIGBT devices, the devices face severe hot-carrier effects. Hot ...

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Problems solved by technology

[0008] The invention provides a method for testing the interface state of a lateral insulated gate bipolar transistor and a 5-port device, which can test each area inside the device, especially the polysilicon gate field plate area and the end of the field plate, without changing the electrical characteristics of the device. This solves the problem that the polysilicon gate field plate and the interface state at the end of the field plate cannot be measured when SOI-LIGBT is used for CP experiments.

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