Eureka AIR delivers breakthrough ideas for toughest innovation challenges, trusted by R&D personnel around the world.

Lateral double-diffused metal oxide semiconductor field effect transistor with adjustable field plate

A technology of oxide semiconductor and lateral double diffusion, which is applied in the direction of semiconductor devices, electrical components, circuits, etc., can solve the problems of small on-resistance, uneven distribution of lateral electric field in the drift region, etc., achieve small on-resistance and increase process cost , the effect of high lateral pressure resistance

Active Publication Date: 2020-04-14
UNIV OF JINAN
View PDF5 Cites 0 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0004] The object of the present invention is exactly in order to solve above-mentioned problem, has proposed the horizontal double-diffusion metal oxide semiconductor field effect transistor with adjustable type field plate, and the effect size of each field plate in this device can be adjusted through device structure parameter design, improves The problem of uneven lateral electric field distribution in the drift region is solved, and the device has higher lateral withstand voltage capability and smaller on-resistance

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Lateral double-diffused metal oxide semiconductor field effect transistor with adjustable field plate
  • Lateral double-diffused metal oxide semiconductor field effect transistor with adjustable field plate
  • Lateral double-diffused metal oxide semiconductor field effect transistor with adjustable field plate

Examples

Experimental program
Comparison scheme
Effect test

Embodiment Construction

[0028] The present invention will be further introduced below with reference to the accompanying drawings and specific embodiments.

[0029] The invention discloses a lateral double-diffused metal oxide semiconductor field effect transistor with an adjustable field plate, comprising: a P-type semiconductor substrate 1, a buried oxide layer 2 is arranged on the P-type semiconductor substrate 1, An N-type drift region 3 and a P-type well 4 are arranged on the buried oxide layer 2, a P-type contact region 5 and an N-type source region 6 are arranged on the P-type well 4, and a P-type contact region 5 and an N-type source region 6 are arranged on the P-type well 4. A source metal 7 is connected to it, a field oxide layer 8 and an N-type drain region 9 are arranged on the N-type drift region 3, a drain metal 10 is connected to the N-type drain region 9, and part of the N-type drift region 3 and A gate oxide layer 11 is provided above part of the P-type well 4, and one end of the ga...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

No PUM Login to View More

Abstract

The present invention proposes a lateral double-diffused metal oxide semiconductor field effect transistor with an adjustable field plate, comprising: a field oxide layer and a drift region below the field oxide layer, and several Adjustable field plates, the distance between two adjacent adjustable field plates is set; each adjustable field plate is connected to an adjustment capacitor; by adjusting the size of the adjustable field plate and the positive and negative electrodes of the adjustment capacitor , which can adjust the amount of induced charge and the induced potential on the adjustable field plate, so that a uniform surface lateral electric field distribution can be obtained in the drift region. The structural device can improve the lateral electric field distribution on the surface of the drift region of the device, and has high lateral withstand voltage capability and small on-resistance.

Description

technical field [0001] The invention relates to the field of power semiconductor devices, and more particularly, to a lateral double-diffused metal-oxide-semiconductor field-effect transistor (LDMOS) with an adjustable field plate suitable for high-voltage applications. Background technique [0002] Lateral Double Diffused Metal Oxide Semiconductor Field Effect Transistor (LDMOS) is a lateral structure of Double Diffused Metal Oxide Semiconductor Field Effect Transistor (DMOS). It has the advantages of high withstand voltage, large gain, easy driving, etc., and is more compatible with CMOS technology, so it is widely used in intelligent power integrated circuits. At present, the design of the lateral double-diffused metal-oxide-semiconductor field-effect transistor (LDMOS) focuses on how to reasonably alleviate the contradiction between the breakdown voltage and the on-resistance, and ensure its high stability. At present, the research focus of lateral double-diffused metal...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
Patent Type & Authority Patents(China)
IPC IPC(8): H01L29/40H01L29/78
CPCH01L29/404H01L29/7816H01L29/7824H01L29/42368H01L29/41
Inventor 张春伟岳文静李阳付小倩李志明
Owner UNIV OF JINAN
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Eureka Blog
Learn More
PatSnap group products

Browse by: Latest US Patents, China's latest patents, Technical Efficacy Thesaurus, Application Domain, Technology Topic, Popular Technical Reports.

© 2024 PatSnap. All rights reserved.Legal|Privacy policy|Modern Slavery Act Transparency Statement|Sitemap|About US| Contact US: help@patsnap.com