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Method and system for extracting beam etching verticality

A technology of verticality and vertical displacement, which is applied to the process, coating, and microstructure devices used to produce decorative surface effects, can solve the problems of lack of extraction methods for beam etching verticality, and achieve predictive device performance and reliability. performance, simple measurement method, and easy-to-use effect

Active Publication Date: 2017-02-01
PEKING UNIV
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Problems solved by technology

[0004] However, the existing methods for quantitatively monitoring the etching process mainly reflect the etching effect by extracting the fracture strength and line width loss of the beam after etching, and there is a relatively lack of extraction methods for the verticality of the beam etching.

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  • Method and system for extracting beam etching verticality
  • Method and system for extracting beam etching verticality
  • Method and system for extracting beam etching verticality

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Embodiment Construction

[0027] The invention proposes a method for extracting the verticality of micro-beam etching manufactured by bulk silicon technology by using the principle of statically driven beam torsion. The following describes how to use this method to extract the etch verticality of the microbeams manufactured by the deep etching process in combination with the standard bonding deep etching release process of Peking University. The main steps are as follows:

[0028] (1) Process tape-out. The process used is the standard process of bonding deep etch release, which mainly includes (such as Figure 4 shown):

[0029] (a) ASE silicon wafer, 4 μm, carved with anchor leg steps;

[0030] (b) Glass sheet preparation;

[0031] (c) Anodic bonding of silicon wafers and glass wafers;

[0032] (d) KOH thins the silicon surface, and the remaining thickness is 75±5μm;

[0033] (e) Etching the silicon wafer by deep etching technology, the structure is released, and the following figure 1 The on-ch...

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Abstract

The present invention discloses a method and a system for extracting the beam etching verticality. According to the present invention, based on the electrostatic driving beam twist principle, a newly-designed on-chip detection structure, an electrical signal applying device and a vertical displacement detection device are used to form the system to extract the beam etching verticality parameter; with the method, the etching (corrosion) process monitoring can be performed, and the mechanical reliability of the device can be predicted; and the method is simple and has versatility.

Description

technical field [0001] The invention belongs to the field of micro-electro-mechanical system (MEMS) process quality monitoring and device performance testing, and relates to a method and system for etching verticality of microbeams manufactured by extracting bulk silicon technology, and is especially used in quantitative monitoring of dry etching process and prediction The field of device performance and reliability. Background technique [0002] Since the 1990s, microelectromechanical systems (MEMS) technology has entered a stage of rapid development, not only because of the novel concept, but also because MEMS devices have the prospect of miniaturization, integration and better performance compared with traditional devices. Now MEMS has been widely used in automobiles, aerospace, information control, medicine, biology and other fields. [0003] The silicon MEMS process has gradually become the mainstream MEMS process method. Among them, for the MEMS device manufactured b...

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Application Information

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IPC IPC(8): B81C1/00
Inventor 何军张大成张立杨芳刘鹏王玮李婷罗葵田大宇
Owner PEKING UNIV