Method for generating lanthanide ion sources

Abstract

A method for producing a lanthanide ion source comprises the steps of: heating one or more non-gaseous lanthanide compounds such that the one or more non-gaseous lanthanide compounds are converted to a gaseous state; transferring the one or more non-gaseous lanthanide compounds to an arc chamber; transporting at least one support gas to the arc chamber; providing energy for the arc chamber to form a plasma containing lanthanide ions in the arc chamber; and extracting the lanthanide ions from the plasma containing lanthanide ions to form a lanthanide ion beam.

Description

technical field [0001] The present invention relates to a method for generating an ion source for ion implantation, in particular to a method for generating an ion source for lanthanide ions, the ion source uses at least one support gas to Increase the probability of molecular collisions in the lanthanide compound plasma (plasma) to increase the current size and stability of the extracted electron beam. Background technique [0002] Ion implantation is a physical process, which can selectively implant the ions of the implanted material to a specific area on the substrate under specific conditions (such as specific energy and specific direction). is used to dope-introduce chemically active species into a workpiece of semiconductor material such as typically silicon. Generally speaking, during ion implantation, one or more materials including the implanted material will be dissociated into plasma in the ion source first, and the plasma is generated and maintained in the arc c...

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Problems solved by technology

[0008] Third, the boiling point of lanthanide compounds is usually very high. For example, ytterbium compounds need to be heated to 600-700 degrees Celsius in the evaporator to form a gaseous state. Therefore, the time from the beginning of heating to the generation of plasma extraction ion beam (ramp uptime) Longer, the generated ions are not many, and because the number of ions is too small, the current of the generated ion beam is too small, it is difficult to control and use

[0010] However, so far no method has been proposed for lanthanide compounds

Since even similar methods will vary with variables such as different ions to be implanted, different materials used to form plasma, and different hardware designs of ion source generating devices, each has its own applicable manufacturing process. No method has been found that can also be applied to lanthanide ion sources

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