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Preparation method of atomic flat Sr/Si(100)-(2 * 3) reconstruction surface

An atomic-level, flat technology, applied in the direction of ion implantation plating, metal material coating process, coating, etc., can solve the problem of reducing the dielectric properties of high dielectric constant oxides and unable to realize epitaxial growth of high dielectric constant oxides and other problems to achieve the effect of convenient operation

Active Publication Date: 2017-02-15
常州鼎先电子有限公司
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  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

[0003] Due to the presence of highly reactive dangling bonds on the outermost silicon atoms on the surface of single crystal silicon, if a high dielectric constant oxide such as SrTiO 3 Depositing on it will cause the dangling bonds on the silicon surface to react with the oxygen in the oxide to form silicon oxide, resulting in the inability to achieve epitaxial growth of high dielectric constant oxides on silicon, thereby reducing the dielectric properties of high dielectric constant oxides

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  • Preparation method of atomic flat Sr/Si(100)-(2 * 3) reconstruction surface

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Embodiment 1

[0041] A method for preparing an atomically flat Sr / Si(100)-2×3 reconstructed surface in this embodiment uses a single crystal silicon (100) sheet as a substrate, and the steps are as follows:

[0042] 1) Substrate cleaning:

[0043] 1-1) Cut the single crystal silicon (100) piece into a certain size, in this embodiment, the single crystal silicon (100) piece is cut into 2×2cm 2 size;

[0044] 1-2) ultrasonically clean the cut monocrystalline silicon (100) slices in acetone. In this embodiment, the single crystal silicon (100) slices are ultrasonically cleaned in acetone for 3 times, and the time for each ultrasonic cleaning is 15 minutes;

[0045] 1-3) The monocrystalline silicon (100) slices ultrasonically cleaned with acetone were cleaned with pure water. The time is 10 minutes;

[0046] 1-4) Blow dry the monocrystalline silicon (100) sheet after ultrasonic cleaning with pure water with high-purity nitrogen, and then put it into a vacuum chamber;

[0047] 2) Remove the si...

Embodiment 2

[0062] A method for preparing an atomically flat Sr / Si(100)-2×3 reconstructed surface in this embodiment uses a single crystal silicon (100) sheet as a substrate, and the steps are as follows:

[0063] 1) Substrate cleaning:

[0064] 1-1) Cut the single crystal silicon (100) piece into a certain size, in this embodiment, the single crystal silicon (100) piece is cut into 2×2cm 2 size;

[0065] 1-2) ultrasonically clean the cut monocrystalline silicon (100) slices in acetone. In this embodiment, the single crystal silicon (100) slices are ultrasonically cleaned in acetone for 3 times, and the time for each ultrasonic cleaning is 15 minutes;

[0066] 1-3) The monocrystalline silicon (100) slices ultrasonically cleaned with acetone were cleaned with pure water. The time is 10 minutes;

[0067] 1-4) Blow dry the monocrystalline silicon (100) sheet after ultrasonic cleaning with pure water with high-purity nitrogen, and then put it into a vacuum chamber;

[0068] 2) Remove the ...

Embodiment 3

[0082] A method for preparing an atomically flat Sr / Si(100)-2×3 reconstructed surface in this embodiment uses a single crystal silicon (100) sheet as a substrate, and the steps are as follows:

[0083] 1) Substrate cleaning:

[0084] 1-1) Cut the single crystal silicon (100) piece into a certain size, in this embodiment, the single crystal silicon (100) piece is cut into 2×2cm 2 size;

[0085] 1-2) ultrasonically clean the cut monocrystalline silicon (100) slices in acetone. In this embodiment, the single crystal silicon (100) slices are ultrasonically cleaned in acetone for 3 times, and the time for each ultrasonic cleaning is 15 minutes;

[0086] 1-3) The monocrystalline silicon (100) slices ultrasonically cleaned with acetone were cleaned with pure water. The time is 10 minutes;

[0087] 1-4) Blow dry the monocrystalline silicon (100) sheet after ultrasonic cleaning with pure water with high-purity nitrogen, and then put it into a vacuum chamber;

[0088] 2) Remove the ...

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Abstract

The invention discloses a preparation method of an atomic flat Sr / Si(100)-(2 * 3) reconstruction surface, and belongs to the field of nanometer. With a monocrystalline silicon (100) wafer adopted as a substrate, the preparation method of the atomic flat Sr / Si(100)-(2 * 3) reconstruction surface comprises the steps of 1) cleaning the substrate; 2) removing silicon oxide on the surface of the substrate, and preparing an Si(100)-(2 * 1) reconstruction surface; 3) preparing a sub-monolayer metallic strontium thin film on the substrate with the Si(100)-(2 * 1) reconstruction surface; and 4) preparing the atomic flat Sr / Si(100)-(2 * 3) reconstruction surface. According to the preparation method, the steps are simple, the operation is convenient, the atomic flat Sr / Si(100)-(2 * 3) reconstruction surface is obtained, and the cover degree of strontium on the Sr / Si(100)-(2 * 3) reconstruction surface can be accurately determined as one sixth of a monoatomic layer.

Description

technical field [0001] The invention relates to a method for preparing a reconstructed surface, more specifically, to a method for preparing an atomically flat Sr / Si(100)-2×3 reconstructed surface. Background technique [0002] With the improvement of integrated circuit integration, the gate insulating layer material SiO in CMOS basic units 2 The thickness continues to decrease, while SiO 2 The dielectric constant is only 3.9, when SiO 2 After the thickness of the SiO is reduced to the nanometer level, the quantum tunneling effect will occur at this time, causing a large number of electrons to pass through the SiO 2 The insulating layer makes the leakage current too large to cause the CMOS device to fail. To overcome this problem, SiO 2 The insulating layer is replaced by an oxide with a high dielectric constant, such as SrTiO 3 (dielectric constant is 300), BaTiO 3 Wait. In this way, even if the gate insulating layer maintains the same physical thickness, the leakage...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): C23C14/02C23C14/28C23C14/30C23C14/16C23C14/58
CPCC23C14/02C23C14/021C23C14/16C23C14/28C23C14/30C23C14/5806
Inventor 杜文汉杨景景熊超朱锡芳
Owner 常州鼎先电子有限公司
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