Looking for breakthrough ideas for innovation challenges? Try Patsnap Eureka!

Photovoltaic cells based on vias through silicon

A technology of photovoltaic cells and through-silicon vias, applied in photovoltaic power generation, photovoltaic modules, circuits, etc., can solve the problems of low and insufficient silicon solar cells

Active Publication Date: 2018-12-11
INTEL CORP
View PDF5 Cites 0 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

Although a conventional SOC may include a photovoltaic cell, the current (and thus the power generated) generated by a conventional silicon solar cell (which stores energy from the photovoltaic cell) can be quite low (eg, 1 mWh) depending on the lighting level
This low amount of current / power may not be sufficient for many circuits on the SOC (e.g., conventional (complementary metal-oxide-semiconductor) (CMOS) circuits)

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Photovoltaic cells based on vias through silicon
  • Photovoltaic cells based on vias through silicon
  • Photovoltaic cells based on vias through silicon

Examples

Experimental program
Comparison scheme
Effect test

example 1

[0038] Example 1 includes an apparatus comprising: a first photovoltaic cell; a first through-silicon via (TSV) included in the first photovoltaic cell and passing through a doped silicon liner At least a portion of the bottom, the first TSV includes (a)(i) a first sidewall that is doped opposite to the doped silicon substrate, and (a)(ii) ) a first contact substantially filling the first TSV; and a second TSV included in the first photovoltaic cell and passing through the doped silicon liner At least another portion of the bottom, the second TSV includes (b)(i) a second sidewall, the second sidewall includes the doped silicon substrate, and (b)(ii) a second contact , the second contact portion substantially fills the second TSV; wherein both the first contact portion and the second contact portion include a substantially transparent conductive material.

[0039] In Example 2, the subject matter of Example 1 can optionally include wherein the first bottom surface of the first...

example 17

[0054] Example 17 includes an apparatus comprising: a first via included in a first photovoltaic cell and extending from a top surface of a doped substrate to a bottom surface of the doped substrate , the first via hole includes (a)(i) a first sidewall doped opposite to the doped substrate, and (a)(ii) a first contact portion, the first contact substantially filling the first via; and a second via included in the first photovoltaic cell and extending from the top surface to the bottom surface, the second via hole includes (b) (i) a second sidewall, the second sidewall includes the doped substrate, and (b) (ii) a second contact portion, the first The second contact portion substantially fills the second via hole; wherein both the first contact portion and the second contact portion include a transparent conductive material. Again, not all embodiments require TSVs, and some embodiments may use vias (eg, vias extending through non-silicon substrates) or other holes instead of or...

example 21

[0058] Example 21 includes a method comprising: forming a reflective metal in direct contact with a bottom surface of a doped substrate; patterning the reflective metal into portions that do not contact each other; forming a first via and a second via holes, the first via hole and the second via hole are included in the first photovoltaic cell, the first via hole and the second via hole each extending from the top surface of the doped substrate to doping the bottom surface of the doped substrate; doping the first sidewall of the first via hole in a manner opposite to that of the doped substrate; and forming a a via and the second via coupled to the first and second contacts of the reflective metal; wherein the first and second contacts each comprise a substantially transparent conductive Material.

[0059] In Example 22, the subject matter of Example 21 can optionally include wherein the first sidewall comprises a PN junction extending from the top of the doped substrate to t...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

No PUM Login to View More

Abstract

Embodiments include an apparatus comprising: a first photovoltaic cell; a first through-silicon via (TSV) included in the first photovoltaic cell and passing through at least In one portion, the first TSV includes (a)(i) first sidewalls, the first sidewalls being doped oppositely to the doped silicon substrate, and (a)(ii) first contact portions, the first contact portion substantially filling the first TSV; and a second TSV included in the first photovoltaic cell and passing through at least another portion of the doped silicon substrate, the second TSV including (b)(i) a second side wall, the second sidewall includes a doped silicon substrate, and (b) (ii) a second contact portion substantially filling the second TSV; wherein the first contact portion and the second contact portion are both A substantially transparent conductive material is included. Other embodiments are described herein.

Description

technical field [0001] Embodiments of the invention are in the field of semiconductor devices, and in particular, in the field of photovoltaic cells. Background technique [0002] A system on a chip or system on a chip (SOC) is an integrated circuit (IC) that integrates the components of a computer or other electronic system into a single chip. SOCs can contain digital, analog, mixed-signal, and / or radio frequency functions—all on a single chip substrate. SOCs can be self-powered using systems that convert vibrations, differences in temperature or light, into power. For example, a photovoltaic cell located on the SOC can power the SOC. Photovoltaic cells are electrical devices that use the photovoltaic effect to convert light energy into power. When light is incident on the battery, the battery's current, voltage, and resistance change. When exposed to light, the battery can generate an electrical current without being attached to any external power source. The light ca...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
Patent Type & Authority Patents(China)
IPC IPC(8): H01L31/0224H01L31/056H01L31/047
CPCH01L31/022475H01L31/068H01L31/047H01L31/056H02S40/38Y02E10/52Y02E10/547Y02E70/30H01L31/022441H01L31/022458H01L31/02327H01L31/18Y02E10/50H01L31/028H01L31/0516H01L31/0682H01L31/1884
Inventor K·弗阿N·尼迪C-H·简W·M·哈菲兹Y·W·陈
Owner INTEL CORP
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Patsnap Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Patsnap Eureka Blog
Learn More
PatSnap group products