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Optimization method for physical parameters of film bulk acoustic resonator

A thin-film bulk acoustic wave and physical parameter technology, applied in multi-objective optimization, design optimization/simulation, instrumentation, etc., can solve problems such as lack of theoretical support or simulation calculations

Inactive Publication Date: 2017-02-22
FOSHAN AIFO LIGHT FLUX TECH CO LTD
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  • Abstract
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  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0004] At present, the research on the performance of resonators by FBAR physical parameters is not yet mature, and there is a lack of relevant theoretical support or simulation calculations. The parameters directly or indirectly affect the quality factor and effective electromechanical coupling coefficient of the resonator, which in turn determines the bandwidth and performance of the resonator

Method used

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  • Optimization method for physical parameters of film bulk acoustic resonator
  • Optimization method for physical parameters of film bulk acoustic resonator
  • Optimization method for physical parameters of film bulk acoustic resonator

Examples

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Embodiment 1

[0032] Such as figure 1 As shown, the method for optimizing the physical parameters of the thin film bulk acoustic resonator in this embodiment includes the following steps:

[0033] (1) Establish the equivalent model of the electrode in ADS: take the Al electrode as an example to establish as figure 2 The shown circuit diagram calculates the input impedance of the electrode based on the transmission line theory and the acoustic properties of the material.

[0034] (2) According to the piezoelectric equation, input the Mason model of the traditional piezoelectric body into the ADS software, and establish as image 3 Schematic of the Mason equivalent model for the piezoelectric layer shown.

[0035] (3) Connect the equivalent circuit of the electrode layer to the equivalent circuit of the traditional piezoelectric layer, and cascade to obtain the equivalent circuit of the traditional FBAR, such as Figure 4 shown.

[0036] (4) Correct the FBAR equivalent circuit, and pass ...

Embodiment 2

[0043] The influence of the elastic stiffness constant of the piezoelectric layer on the device performance is considered.

[0044] (1) Establish the equivalent model of the electrode in ADS: take the Al electrode as an example to establish as figure 2 The shown circuit diagram calculates the input impedance of the electrode based on the transmission line theory and the acoustic properties of the material.

[0045] (2) According to the piezoelectric equation, input the Mason model of the traditional piezoelectric body into the ADS software, and establish as image 3 Schematic of the Mason equivalent model for the piezoelectric layer shown.

[0046] (3) Connect the equivalent circuit of the electrode layer to the equivalent circuit of the traditional piezoelectric layer, and cascade to obtain the equivalent circuit of the traditional FBAR, such as Figure 4 shown.

[0047] (4) Correct the FBAR equivalent circuit, and pass the longitudinal wave sound velocity, acoustic imped...

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Abstract

The invention discloses an optimization method for physical parameters of a film bulk acoustic resonator (FBAR). The method comprises the steps of building equivalent models of an electrode layer and a piezoelectric layer; tuning physical parameters of the piezoelectric layer of the FBAR by applying ADS software; and simulating a quality factor and an effective electromechanical coupling coefficient of the Mason model-based FBAR. According to the method, the effective electromechanical coupling coefficient of the FBAR is obtained through a series-parallel resonant frequency of the FBAR, and the quality factor of a device is calculated through a phase-frequency characteristic. Through the method, the influence of a clamping dielectric constant, a piezoelectric stress constant, density and an elastic stiffness constant in physical attributes of a piezoelectric material of the FBAR on the device performance of the FBAR is directly optimized and a theoretical basis is provided for a method for optimizing the resonator by changing physical attributes of a film.

Description

technical field [0001] The invention belongs to the technical field of optimizing thin film bulk acoustic wave resonators, in particular to an optimization method for the physical parameters of the piezoelectric layer of the thin film bulk acoustic wave resonator based on the Mason model using ADS software. Background technique [0002] In the past ten years, personal wireless communication technology has shown a diversified development trend. In the past, mobile phone communication tools used only for calls and text messages have now become communication devices that integrate voice, pictures, video and global positioning systems. , which makes more functional plates must be compressed into the already crowded wireless terminal. The arrival of the 4G era has allowed us to enjoy fast and efficient communication services. In order to meet the needs of users, future communication systems must develop to higher frequency bands. [0003] With the rapid development of wireless ...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): G06F17/50
CPCG06F30/20G06F2111/06
Inventor 李国强刘国荣谢昌俊李洁
Owner FOSHAN AIFO LIGHT FLUX TECH CO LTD
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