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Trench capacitor and production method thereof

A technology of trench capacitors and trenches, applied in capacitors, circuits, electrical components, etc., can solve problems such as high precision requirements and difficult industrial production, and achieve low precision requirements, reduce process costs, and simplify production processes.

Inactive Publication Date: 2017-02-22
PEKING UNIV FOUNDER GRP CO LTD +1
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

[0005] For this reason, what the present invention is to solve is the problem that the existing method for preparing trench capacitors requires high precision and is difficult to realize industrialized production, thereby providing a method for preparing trench capacitors with a simple process and easy implementation and the trench capacitors prepared by the method. Tank capacitance

Method used

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  • Trench capacitor and production method thereof
  • Trench capacitor and production method thereof
  • Trench capacitor and production method thereof

Examples

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Embodiment 1

[0042] This embodiment provides a trench capacitor and its preparation method, such as Figure 8 As shown, the trench capacitor includes a capacitor first plate 32 and a second plate 33 vertically formed in the substrate 1 and isolated from each other, and an interposer sandwiched between the two capacitor plates 32 and 33. Electrical layer 4.

[0043] In this embodiment, the capacitor plates 32 and 33 are polysilicon plates doped with impurity P, and the resistance value is less than 15Ω / □, which endows the trench capacitor with a larger capacitance value.

[0044] The substrate 1 is a silicon substrate. As a convertible embodiment of the present invention, the substrate 1 is selected from but not limited to an N-type silicon substrate and a P-type silicon substrate, both of which can achieve the purpose of the present invention and belong to protection scope of the present invention.

[0045] The preparation method of the trench capacitance, such as Figure 13 shown, incl...

Embodiment 2

[0062] This embodiment provides a trench capacitor and its preparation method, such as Figure 12 As shown, the trench capacitor includes a capacitor first plate 32 and a second plate 33 vertically formed in the substrate 1 and isolated from each other, and an interposer sandwiched between the two capacitor plates 32 and 33. Electrical layer 4.

[0063] In this embodiment, the capacitor plates 32 and 33 are polysilicon plates doped with impurity P, and the resistance value is less than 15Ω / □, which endows the trench capacitor with a larger capacitance value.

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Abstract

The invention relates to the semiconductor technology field, and discloses a trench capacitor and a production method thereof. The production method of the trench capacitor is advantageous in that the trench capacitor is acquired after two times of etching and two times of deposition technology, a technology is simple, and thickness of a dielectric layer is adjustable, and a precision requirement is low, and in addition, industrial production is realized, and production costs are low. The trench capacitor is advantageous in that the thickness of the dielectric layer is small, and the capacitance value of the unit area is high; various assemblies of the trench capacitor can be produced at the same layer as the thin film transistor of the same IC, and therefore the production technology is effectively simplified, and the technological costs are reduced.

Description

technical field [0001] The invention relates to the technical field of semiconductors, in particular to a method for preparing a trench capacitor and the trench capacitor prepared by the method. Background technique [0002] In the development of integrated circuits for more than half a century, the feature size of transistors has been continuously reduced following Moore's law, and the functions and performance of integrated circuits have been continuously improved. However, as the most important storage unit, the size of the capacitor has always been limited by the dielectric material, which cannot be effectively reduced, which greatly increases the total area of ​​the chip, thereby significantly increasing the manufacturing cost of the chip. [0003] To this end, R&D personnel have designed three capacitor structures: planar capacitors, stacked capacitors, and trench capacitors to reduce the size of the capacitor. In order to obtain a higher capacitance density, a film w...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L21/02
CPCH01L28/40
Inventor 李如东谭志辉冶晓飞
Owner PEKING UNIV FOUNDER GRP CO LTD
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