Device for manufacturing polysilicon using horizontal reactor and method for manufacturing same

Abstract

The present invention provides a polysilicon manufacturing device comprising: a transverse reaction tube positioned inside an insulation tube and configured such that a port for supplying raw material gases, including a reaction gas and a reduction gas, a residual gas discharge port, a reaction surface, with which the raw material gases make contact, and an opening for discharging molten polysilicon, which has been generated by a reaction of the raw material gases, are formed on the bottom surface of the transverse reaction tube; an internal structure installed inside the transverse reaction tube so as to provide an additional reaction surface; and a first heating means for heating the reaction surface of the transverse reaction tube. The present invention also provides a polysilicon manufacturing method using the polysilicon manufacturing device.

Description

technical field [0001] The present invention relates to a polysilicon production device and method, more specifically, a polysilicon production device and method using a horizontal reactor. Background technique [0002] In recent years, the demand for polycrystalline silicon as a raw material in the manufacture of electronic devices such as semiconductor devices and photovoltaic devices has been increasing. There are many known methods for producing silicon as raw material in the manufacture of semiconductors or solar photovoltaic cells, and some of them have been implemented industrially. [0003] Currently commercially available high-purity polysilicon is usually produced by chemical vapor deposition. Specifically, polysilicon can be prepared by reacting trichlorosilane gas with a reducing gas such as hydrogen, as described in reactions 1 and 2: [0004] SiHCl 3 +H 2 →Si+3HCl (1) [0005] 4SiHCl 3 →Si+3SiCl 4 +2H 2 (2) [0006] The Siemens method is a typical pro...

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Problems solved by technology

However, figure 1 and figure 2 The illustrated polysilicon production apparatus has a problem that a large amount of reaction gas and reducing gas entering the reaction tube 21 passes through the reaction tube without contacting the wall surface of the reaction tube 21, and therefore, sufficient deposition does not occur at a high temperature

[0017] That is, since heat is not sufficiently transferred to the gas flowing through the central portion of the reaction tube 21 farthest from the heating coil 23, a slow reduction reaction occurs, resulting in lower overall production efficiency and energy efficiency.

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