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83results about "High temperature gas-gas reaction" patented technology

Reforming apparatus and method

A multiple adiabatic bed reforming apparatus and process are disclosed in which stage-wise combustion, in combination with multiple reforming chambers with catalyst, utilize co-flow and cross-flow under laminar flow conditions, to provide a reformer suitable for smaller production situations as well as large scale production. A passive stage by stage fuel distribution network suitable for low pressure fuel is incorporated and the resistances in successive fuel distribution lines control the amount of fuel delivered to each combustion stage. The fuel distribution system allows relatively constant fuel and air flow during turn up or turn down conditions. High efficiency is achieved by capturing heat from reforming syngas product to preheat gases before entering the reformer. Conditions that would produce unwanted coking or metal dusting are also eliminated or localized to locations within the apparatus outside the heat exchangers, but which locations can be cost effectively protected. Also, a chemical reactor is disclosed and which has a core composed of a stack of metal plates that are diffusion bonded in face-to-face relationship. A plurality of reaction zones are located within the core, as are a plurality of catalyst receiving zones, and both the reaction zones and the catalyst receiving zones are defined by respective aligned apertures in the plates. First and second channel arrangements are provided in the plates for transporting first and second reactants to reaction zones. Portions of the first channel arrangement that interconnect the reaction zones are formed as heat exchange channels. A third channel arrangement is provided in the plates for transporting a third reactant to catalyst receiving zones. Portions of the third channel arrangement are formed as heat exchange channels in proximity to the heat exchange channels of the first channel arrangement.
Owner:MEGGIT (UK) LTD

Ammonia decomposition device, ammonia decomposition system and hydrogen production method

The invention belongs to the technical field of hydrogen production, and concretely relates to an ammonia decomposition device, an ammonia decomposition system and a hydrogen production method. The ammonia decomposition device comprises a shell, a heating zone, a heat exchange zone, a reaction section and a heat exchange coil. The heat exchange coil is spirally wound around the outer wall of the reaction section to sufficiently heat ammonia gas, so the heating efficiency of ammonia gas is increased; a first reaction section and a second reaction section which are sequentially communicated arearranged in the reaction section to ensure that the ammonia gas is decomposed after entering the first reaction section in order to generate a nitrogen and hydrogen mixture, so the decomposition efficiency of the ammonia gas is increased; and the second reaction section can perform secondary decomposition on the residual ammonia gas in the nitrogen and hydrogen mixture produced in the first reaction section, so the residual amount of ammonia gas in the nitrogen and hydrogen mixture in the second reaction section is reduced, thereby the ammonia gas is decomposed more thoroughly. The device makes the conversion rate of ammonia gas reach 99.9% or more and the residual amount of ammonia gas in the nitrogen and hydrogen mixture less than 1000 ppm.
Owner:福大紫金氢能科技股份有限公司

Preparation method of CIGS compound, printing ink and film absorbing layer

The invention discloses a preparation method of a CIGS compound, printing ink and film absorbing layer. The preparation method of the CIGS compound comprises the following steps that a vacuum container is provided, wherein the vacuum container includes a high temperature synthesis area and a low temperature evaporation area which are arranged in a spaced way; single substances of copper, indium and gallium are arranged in the high temperature synthesis area and the single substance of selenium is arranged in the low temperature evaporation area; the copper, the indium and the gallium of the high temperature synthesis area are heated to the molten state, and the selenium of the low temperature evaporation area is heated to the gaseous state; the time when the selenium of the low temperatureevaporation area starts to turn to the gaseous state is not early than the molten time of the copper, the indium and the gallium; the temperature of the high temperature synthesis area and the low temperature evaporation area is preserved; the temperature of the high temperature synthesis area is reduced to be not lower than the molten temperature of the alloy of the copper, the indium and the gallium and the temperature is preserved, then the temperature of high temperature synthesis area and the low temperature evaporation area is reduced to be lower than 100 DEG C; and the forward temperature gradient between the low temperature evaporation area and the high temperature synthesis area is constantly kept in the steps.
Owner:BEIJING APOLLO DING RONG SOLAR TECH
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