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Polysilsesquioxane copolymer and photosensitive resin composition comprising the polysilsesquioxane copolymer

A polysilsesquioxane and photosensitive resin technology, applied in the field of photosensitive resin compositions, can solve the problems of outgassing and volume shrinkage, low transmittance, extremely poor heat resistance, etc., and achieve high residual film rate and high adhesive strength. , the effect of easy control of refractive index

Active Publication Date: 2019-09-24
HUNET PLUS
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0005] Despite these efforts, positive tone compositions typically using photosensitive compounds (PACs) suffer from low transmittance and poor heat resistance, leading to outgassing and volume shrinkage during subsequent processing

Method used

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  • Polysilsesquioxane copolymer and photosensitive resin composition comprising the polysilsesquioxane copolymer
  • Polysilsesquioxane copolymer and photosensitive resin composition comprising the polysilsesquioxane copolymer
  • Polysilsesquioxane copolymer and photosensitive resin composition comprising the polysilsesquioxane copolymer

Examples

Experimental program
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Effect test

Embodiment

[0104] 1. Synthesis of polysilsesquioxane copolymer (photosensitive resin)

Synthetic example 1

[0106]

[0107] The photosensitive resin represented by Formula 4 was prepared by the following procedure.

[0108] Tetrahydrofuran (40 g) as a solvent and ultrapure water (20 g) were placed in a flask equipped with a stirrer and a thermometer, and then potassium carbonate (0.2 g) as a catalyst was added to the flask. The mixture was stirred to dissolve at room temperature for 20 minutes. To the solution was added methyltrimethoxysilane (0.2 moles). The resulting mixture was allowed to react for 2 hours. 4-(triethoxysilyl)butanoic acid (0.3 mol), trimethoxy(phenyl)silane (0.2 mol), and 3-(triethoxysilyl) were slowly added dropwise to the reaction solution over a period of 30 minutes. base) a mixture of propyl methacrylate (0.3 mol). After the dropwise addition was completed, the reaction was carried out for 8 hours. The reaction mixture was extracted with dichloromethane. Dichloromethane was distilled off under reduced pressure to obtain the target copolymer of formula...

Synthetic example 2

[0111]

[0112] The photosensitive resin represented by Formula 5 was prepared by the following procedure.

[0113] Tetrahydrofuran (40 g) as a solvent and ultrapure water (20 g) were placed in a flask equipped with a stirrer and a thermometer, and then potassium carbonate (0.2 g) as a catalyst was added to the flask. The mixture was stirred to dissolve at room temperature for 20 minutes. Trimethoxy(3-(oxiran-2-ylmethoxy)propyl)silane (0.2 mol) was added to the solution. The resulting mixture was allowed to react for 2 hours. 4-(triethoxysilyl)butanoic acid (0.3 mol), trimethoxy(phenyl)silane (0.2 mol), and 3-(triethoxysilyl) were slowly added dropwise to the reaction solution over a period of 30 minutes. base) a mixture of propyl methacrylate (0.3 mol). After the dropwise addition was completed, the reaction was carried out for 8 hours. The reaction mixture was extracted with dichloromethane. Dichloromethane was distilled off under reduced pressure to obtain the targe...

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Abstract

A photosensitive resin containing (A) a polysilsesquioxane copolymer represented by chemical formula 1 is provided.

Description

technical field [0001] The invention relates to a polysilsesquioxane copolymer and a photosensitive resin composition comprising the copolymer. More specifically, the present invention relates to excellent resolution, insulating properties, planarity, chemical resistance, heat resistance, controllability of refractive index, and adhesion strength and especially in the formation of liquid crystal display devices for high aperture ratio and Negative and positive photosensitive resin compositions that can ensure sensitivity, residual film rate, and UV transmittance significantly higher than traditional photosensitive resin compositions in organic insulating films of reflective liquid crystal display devices. Background technique [0002] Compositions used for insulating films of thin film transistor (TFT) liquid crystal display devices and organic light-emitting devices are classified into positive and negative types according to the solubility of photosensitive parts at the ti...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): C08G77/16C08L83/06C08F283/12G03F7/004G03F7/029
Inventor 车爀镇朴陈圭
Owner HUNET PLUS
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