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Electrically assisted device and electrically assisted method for growing nitride crystal

A nitride crystal and growth device technology, applied in crystal growth, single crystal growth, single crystal growth and other directions, can solve the problems of lack of nitrogen source in growth reaction, low growth rate, difficulty in nitrogen dissolution, etc. The effect of reaction rate, improving crystal quality

Active Publication Date: 2017-03-15
DONGGUAN INST OF OPTO ELECTRONICS PEKING UNIV
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

At present, there are problems such as nitrogen vacancies and low growth rate when growing gallium nitride crystals by the sodium flux method. The root cause is the lack of nitrogen source for the growth reaction, that is, nitrogen is difficult to dissolve and difficult to participate in the reaction.

Method used

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  • Electrically assisted device and electrically assisted method for growing nitride crystal
  • Electrically assisted device and electrically assisted method for growing nitride crystal
  • Electrically assisted device and electrically assisted method for growing nitride crystal

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0025] as attached figure 1 As shown, an electrically assisted nitride crystal growth device includes a reactor 200 and a crucible 210 disposed in the reactor 200, the crucible 210 is filled with a reactant solution 211, and the inner bottom of the crucible 210 is placed with a reactant solution 211 submerged seed template 212, the reaction kettle 200 is provided with a nitrogen inlet 202 and an exhaust port 201, a control valve can be respectively arranged in the nitrogen inlet and the exhaust port, and also includes an electrical device, which includes a voltage source 221, The upper electrode and the lower electrode are respectively connected to the voltage source 221 through wires, the upper electrode extends into the crucible 210 and is located above the liquid surface of the reactant solution 211, and the lower electrode is arranged in the reactant solution. The upper electrode consists of a metal support rod 220 and a metal flat plate 223. The metal flat plate 223 is in...

Embodiment 2

[0028] as attached figure 1 As shown, an electrically assisted nitride crystal growth device includes a reactor 100 and a crucible 110 disposed in the reactor 100, the crucible 110 is filled with a reactant solution 111, and the inner bottom of the crucible 110 is placed with a reactant solution 111 submerged seed template 112, the reactor 100 is provided with a nitrogen inlet 102 and an exhaust port 101, a control valve can be respectively arranged in the nitrogen inlet and the exhaust port, and also includes an electrical device, which includes a voltage source 121, The upper electrode 120 and the lower electrode are respectively connected to the voltage source 121 through wires, the upper electrode 120 extends into the crucible 110 and is located above the liquid surface of the reactant solution 111, and the lower electrode is set in the reactant solution. The upper electrode 120 is a metal probe. The upper end of the metal probe is connected to the voltage source 121 throu...

Embodiment 3

[0031] as attached image 3 As shown, an electrically assisted nitride crystal growth device includes a reactor 300 and a crucible 310 disposed in the reactor 300, the crucible 310 is filled with a reactant solution 311, and the inner bottom of the crucible 310 is placed with a reactant solution 311 submerged seed template 312, the reaction kettle 300 is provided with a nitrogen inlet 302 and an exhaust port 301, a control valve can be respectively arranged in the nitrogen inlet and the exhaust port, and also includes an electrical device, the electrical device includes a voltage source 321, The upper electrode 1 and the lower electrode are respectively connected to the voltage source 321 through wires, the upper electrode extends into the crucible 310 and is located above the liquid surface of the reactant solution 311, and the lower electrode is set in the reactant solution. The upper electrode consists of a metal support 320 and a conductive metal plate 322 installed at the...

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PUM

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Abstract

The invention discloses an electrically assisted device and an electrically assisted method for growing a nitride crystal. The electrically assisted device comprises a reaction kettle and a crucible arranged in the reaction kettle, wherein the crucible is filled with a reactant solution; a seed crystal template soaked with the reactant solution is placed on the internal bottom surface of the crucible; a nitrogen inlet and an air outlet are formed in the reaction kettle. The electrically assisted device also comprises an electrical device, the electrical device comprises a voltage source, an upper electrode and a lower electrode, the upper electrode and the lower electrode are connected with the voltage source through leads respectively, the upper electrode extends to the interior of the crucible and is positioned above the liquid surface of the reactant solution, and the lower electrode is arranged in the reactant solution. The crystalline quality and the growth rate of a gallium nitride single crystal are improved.

Description

technical field [0001] The invention relates to a nitride crystal growth device, in particular to an electrically assisted nitride crystal growth device and method. Background technique [0002] As one of the representative materials of the third-generation semiconductor materials, gallium nitride has important application value in the fields of blue or ultraviolet semiconductor lasers and semiconductor light-emitting diodes. As traditional methods for growing gallium nitride crystals, there are known hydride vapor deposition methods, metal-organic vapor deposition methods, etc., all of which are vapor phase methods. Although the growth rate is fast, the quality of the grown crystals is relatively low. [0003] In contrast, the crystal quality grown by the liquid phase method is relatively high, and the growth rate is relatively moderate, such as the sodium flux method, which is one of the potential methods for growing gallium nitride crystals. At present, there are problem...

Claims

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Application Information

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IPC IPC(8): C30B29/40C30B30/02C30B7/14
CPCC30B7/14C30B29/406C30B30/02
Inventor 李成明王琦胡耀华巫永鹏陈蛟张耿郑小平卢洪李顺峰张国义
Owner DONGGUAN INST OF OPTO ELECTRONICS PEKING UNIV