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Epitaxial wafer production method

A production method and technology of epitaxial wafers, which are applied in the direction of electrical components, circuits, semiconductor devices, etc., can solve the problems that the uniformity of resistivity is difficult to reduce and the uniformity of resistivity is low, so as to improve the uniformity of resistivity and reduce the subsequent Effect of production cost and temperature reduction

Inactive Publication Date: 2017-03-15
SHANGHAI JINGMENG SILICON CORP
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

[0007] Currently, the acceptable range for resistivity uniformity of epitaxial wafers is less than 5%
However, the epitaxial wafers in the prior art have the lowest resistivity uniformity of only 2.5%. According to the existing technology, it is difficult to reduce the resistivity uniformity value.

Method used

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Examples

Experimental program
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Effect test

Embodiment 1

[0031] see figure 2 , The invention provides a method for producing an epitaxial wafer. The epitaxial wafer production method comprises the following steps:

[0032] providing a substrate body 1;

[0033] providing an intrinsic silicon layer 2, laying the intrinsic silicon layer 2 on the upper surface of the substrate body 1;

[0034] An epitaxial layer 3 is provided, and the epitaxial layer 3 is paved on the upper surface of the intrinsic silicon layer 2 .

[0035] It can be understood that the transistor includes the epitaxial wafer 10 . The transistor adopting the epitaxial wafer 10 can improve high-speed switching and bipolar processing capabilities, and has the characteristics of driving and large capacity. Preferably, the transistor is an insulated gate bipolar transistor (Insulated Gate Bipolar Transistor, IGBT for short). That is, the epitaxial wafer production method is used to produce insulated gate bipolar transistors.

[0036] Please refer to image 3 , the...

Embodiment 2

[0043]In this embodiment, when the first preparation condition is: when the preparation temperature of the epitaxial layer is 1020°C and the formation rate is 0.5 μm / min, the epitaxial wafer 10 and the first comparative embodiment (with no intrinsic silicon layer) The comparison of conventional epitaxial wafers) is obtained in the table below.

[0044] Table 1:

[0045]

Embodiment 3

[0047] In this example, under the second preparation condition: when the preparation temperature of the epitaxial layer is the same as 1020° C. and the formation rate is 1 μm / min, the epitaxial wafer 10 and the second comparative embodiment (the traditional method without an intrinsic silicon layer) Epitaxial wafer) comparison obtained in the table below.

[0048] Table 2:

[0049]

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Abstract

The invention discloses an epitaxial wafer production method. The epitaxial wafer production method comprises the following steps: providing a substrate body; providing an intrinsic silicon layer and paving the intrinsic silicon layer on the upper surface of the substrate body; and providing an epitaxial layer and paving the epitaxial layer on the upper surface of the intrinsic silicon layer. By arranging the intrinsic silicon layer on the upper surface of the substrate body, the substrate body and the epitaxial layer can be separated, thereby preventing the problem of self doping between the substrate body and the epitaxial layer. The substrate can prevent a doping agent in the substrate body from entering the epitaxial layer, and epitaxial layer flat region can be improved to improve resistivity uniformity.

Description

technical field [0001] The invention relates to a production method of a semiconductor device, in particular to a production method of an epitaxial wafer. Background technique [0002] For semiconductor devices, such as insulated gate bipolar transistors (Insulated Gate Bipolar Transistor, IGBT for short), the epitaxial layer needs to have a high-quality crystal structure, and the thickness, conductivity type, resistivity and resistance uniformity of the epitaxial layer, etc. There are certain requirements. The resistivity of semiconductors generally changes with changes in temperature, doping concentration, magnetic field strength, and light intensity. [0003] In the field of semiconductors, circuits and electronic components need to be fabricated on epitaxial wafers, and different applications such as PMOS, NMOS, CMOS and bipolar in the MOS type are saturated and unsaturated. With the development trend of integrated circuit design towards light, thin, short, small and p...

Claims

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Application Information

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IPC IPC(8): H01L29/06H01L21/331
CPCH01L29/0642H01L29/66325
Inventor 顾广安
Owner SHANGHAI JINGMENG SILICON CORP
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