Cured film forming resin composition

A technology of resin composition and cured film, applied in the direction of coating, etc., can solve the problems of complicated process and cost, and achieve the effect of excellent flexibility, excellent resistance and high hardness
CN106536647BActive Publication Date: 2019-05-07NISSAN CHEM CORP

Patent Information

Authority / Receiving Office
CN · China
Patent Type
Patents(China)
Current Assignee / Owner
NISSAN CHEM CORP
Publication Date
2019-05-07

Smart Images

  • Figure 1
    Figure 1
  • Figure 2
    Figure 2
  • Figure 3
    Figure 3
Patent Text Reader

Abstract

The present invention provides a resin composition for forming a cured film, comprising: (A) a copolymer containing monomer units represented by formulas (1) and (2), (B) a melamine-based crosslinking agent, (C) a heat free Based polymerization initiator and (D) solvent. In the formula, R 1 Each independently represents a hydrogen atom or a methyl group. R 2 Represents a hydrogen atom or an alkyl group having 1 to 5 carbon atoms. R 3 represents a hydrogen atom or a methyl group.
Need to check novelty before this filing date? Find Prior Art

Description

technical field

[0001] This invention relates to the resin composition for cured film formation. Background technique

[0002] Conventionally, protective films, insulating films, and the like required for touch panels and the like have been formed at necessary locations by patterning using photolithography using a photosensitive resin composition (Patent Document 1).

[0003] However, patterning by photolithography has the problem of not only complicated steps but also high costs. Therefore, there is a demand for a composition capable of forming a protective film, an insulating film, etc. at necessary locations by a simpler method and at low cost.

[0004] In addition, as shown in Patent Document 2, when an ITO film is formed by sputtering on an insulating film, cracks or the like may occur due to a stress difference between the insulating film and the ITO film. For such a protective film and an insulating film, Resistance to sputtering of ITO also becomes necessary. [0...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More