A method for producing graphene using vacuum photoelectric reaction

Abstract

The invention discloses a method for producing graphene through vacuum photoelectric reaction. The method comprises the following steps: mixing graphite of 1000 meshes with ionized water, and spraying to the inner side of a glass tube; putting the glass tube into a vacuum furnace, vacuumizing, setting electrodes before and after the vacuum furnace, and electrifying the electrodes for photoelectric hating so as to dry and dehumidify the glass tube; and continuously heating, ensuring that the glass tube is completely vacuumized inside, adding helium and neon simultaneously according to a ratio of 4:6, keeping the glass tube being in a vacuum state, continuously electrifying for oxidation reduction for 3-4 hours, and discharging, thereby obtaining the graphene. As graphene is produced in a novel photoelectric reaction mode, and energy transition of photoelectric atoms is utilized, multi-layer graphene can be reduced; meanwhile, as the reaction does not involve multiple oxidation reductants, the production is clean and non-toxic; and furthermore, multiple glass tubes can be placed into the vacuum furnace for carrying out sufficient and uniform reaction simultaneously in uniform contact, so that the capacity and quality can be greatly improved.

Description

technical field [0001] The invention relates to the field of graphene production, in particular to a method for preparing graphene by photoelectric reaction. Background technique [0002] The existing graphene preparation methods are mainly divided into four categories: mechanical exfoliation method, epitaxial growth method, chemical vapor deposition method and graphite reduction method. The micromechanical exfoliation method is simple to operate and has high sample quality. It is currently the main method for producing single-layer high-quality graphene, but its controllability is poor, and the size of the obtained graphene is small, generally between 10-100um. time, and there is a lot of uncertainty, its production efficiency is low, the cost is high, and it is not suitable for large-scale production. However, the cost of raw materials and equipment required by the epitaxial growth method is high, and it requires a very high growth temperature (1400 degrees Celsius), so t...

AI Technical Summary

Problems solved by technology

The graphene that this method obtains is because single-layer graphene is very thin, easily agglomerates, causes to reduce the electrical conductivity of graphene and specific surface area, further influences its application in optoelectronic equipment, in addition, easily causes graphene in this redox process. Crystal structure defects, such as missing carbon atoms on carbocyclic rings, etc.

In the later stage of the preparation of the chemical vapor deposition method, the transfer process of graphene is more complicated, and the preparation cost is higher. In addition, the growth and connection of carbon atoms inside the substrate often have defects.

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