Silicon epitaxy reaction chamber

Abstract

The invention discloses a silicon epitaxy reaction chamber. The silicon epitaxy reaction chamber comprises a reaction chamber, a gas inlet regulating assembly, an exhaust flange and a chip bearing disc, wherein a gas inlet flange is arranged between the gas inlet regulating assembly and a gas inlet of the reaction chamber, an exhaust regulating plate is arranged between an exhaust port of the reaction chamber and the exhaust flange, a plurality of exhaust holes are uniformly formed in the exhaust regulating plate, the reaction chamber comprises a bottom plate and a top plate which are arranged horizontally, the chip bearing disc is arranged on the bottom plate, and the top plate is arranged obliquely from the gas inlet side to the exhaust port side. The silicon epitaxy reaction chamber has the advantages of being simple in structure, convenient to regulate, good in gas stability and uniformity and the like.

Description

technical field [0001] The invention relates to silicon epitaxial reaction equipment, in particular to a silicon epitaxial reaction chamber. Background technique [0002] The silicon epitaxial process not only needs to grow a thin layer on the surface of the substrate that is completely consistent with the lattice structure of the substrate material, but also dope the epitaxial layer to form a P-type or N-type active layer. The silicon epitaxial process is carried out at high temperature, and heat preservation and heat insulation measures are taken, while the epitaxial growth rate is closely related to the gas flow rate. and stability factors. [0003] Patent document CN105386122A discloses an air intake adjustment component of a silicon epitaxy reaction chamber, which can buffer the intake air flow and adjust the intake air flow, so as to better ensure that the air flow entering the reaction chamber is uniform, but the existing The silicon epitaxial reaction chamber still...

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Problems solved by technology

[0003] Patent document CN105386122A discloses an air intake adjustment component of a silicon epitaxy reaction chamber, which can buffer the intake air flow and adjust the intake air flow, so as to better ensure that the air flow entering the reaction chamber is uniform, but the existing The silicon epitaxial reaction chamber still has the following technical problems: it is difficult to maintain a balance between the inlet pressure and the exhaust pressure in the reaction chamber, the stability of the gas flow in the reaction chamber is poor, and the uniformity of the gas flow cannot be met.

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