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LED chip structure and manufacturing method thereof

A technology of LED chip and manufacturing method, which is applied in the direction of electrical components, circuits, semiconductor devices, etc., can solve the problem of low light output efficiency of LED chips, and achieve the effect of increasing the external quantum efficiency of the LED chip, improving the internal quantum efficiency, and improving the luminous efficiency

Inactive Publication Date: 2017-04-26
ENRAYTEK OPTOELECTRONICS
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Problems solved by technology

[0006] In view of the above-mentioned shortcomings of the prior art, the purpose of the present invention is to provide an LED chip structure and its manufacturing method, which are used to solve the problem of low light extraction efficiency of the LED chip in the prior art

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  • LED chip structure and manufacturing method thereof
  • LED chip structure and manufacturing method thereof

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Embodiment 2

[0079] The present invention also provides a LED chip structure, such as Figure 10 As shown, the LED chip structure includes:

[0080] A sapphire substrate 1; a pore array 2 is formed inside the sapphire substrate 1;

[0081] A buffer layer 3, an N-type gallium nitride layer 4, a multi-quantum well light-emitting layer 5 and a P-type gallium nitride layer 6 are sequentially formed on the surface of the sapphire substrate;

[0082] penetrating through the P-type gallium nitride layer 5 and the multi-quantum well light-emitting layer 6, and exposing a recessed region on a part of the surface of the N-type gallium nitride layer 4;

[0083] The P electrode 8 formed on the surface of the P-type gallium nitride layer 6, and the N electrode 9 formed on the surface of the recessed region.

[0084] Specifically, the air hole array 2 may include one or more layers of air holes. Each layer of pores can be but not limited to such as Figure 4 to Figure 6 Any one of the layout methods...

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Abstract

The invention provides a manufacturing method of an LED chip structure. The method comprises the following steps that S1) a sapphire substrate is provided; S2) laser irradiates the back side of the sapphire substrate and is focused in the sapphire substrate, and a pore array is formed in the sapphire substrate; S3) a growth buffer layer, an N type gallium nitride layer, a multi-quantum well luminescent layer and a P type gallium nitride layer are grown on the surface of the sapphire substrate successively; S4) the P type gallium nitride layer and the multi-quantum well luminescent layer are etched to form a recess area, and part of the surface of the N type gallium nitride layer is exposed out of the recess area; and S5) a P electrode is prepared in the surface of the P type gallium nitride layer, an N electrode is prepared in the surface of the recess area, and an LED chip structure is obtained. In the LED chip structure, due to existence of the pore array, the light emitting efficiency of an LED can be improved, a stress of a GaN epitaxial layer can be reduced, and the internal quantum efficiency of the LED is improved.

Description

technical field [0001] The invention belongs to the field of LED chips, and relates to an LED chip structure and a manufacturing method thereof. Background technique [0002] A light emitting diode (Light Emitting Diode, referred to as LED) is a semiconductor light emitting device, which is made by using the principle of semiconductor P-N junction electroluminescence. LED has low energy consumption, small size, long life, good stability, fast response, stable light-emitting wavelength and other good photoelectric properties. It has been widely used in lighting, home appliances, display screens, indicator lights and other fields. In recent years, in order to improve the lighting quality and integration of LED products, the light efficiency per unit area (lm / W / cm 2 ) has become an important indicator to measure LED chips. [0003] The gallium nitride (GaN) material series is an ideal short-wavelength light-emitting device material. The band gap of gallium nitride and its all...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L33/00H01L33/06H01L33/12H01L33/20H01L33/32
CPCH01L33/0066H01L33/0075H01L33/06H01L33/12H01L33/20H01L33/32
Inventor 张宇
Owner ENRAYTEK OPTOELECTRONICS
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