Preparation method of lead-free organic and inorganic cation common hybridization perovskite material and film thereof

A technology of perovskite materials and organic cations, applied in semiconductor/solid-state device manufacturing, photovoltaic power generation, electrical components, etc., can solve the problems of photoelectric performance attenuation and poor stability of perovskite materials, and achieve electronic transition and stability The effect of improved performance and good photoelectric conversion performance

Active Publication Date: 2017-04-26
广州光鼎科技集团有限公司
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

The main reason for the poor stability is that the organic anions combined with the central ion will decompose when exposed to water or air, resulting in a sharp attenuation of the photoelectric properties of the perovskite material.

Method used

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  • Preparation method of lead-free organic and inorganic cation common hybridization perovskite material and film thereof

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Embodiment 1

[0029] A lead-free organic-inorganic cation co-hybridized perovskite material is obtained by co-hybridizing BiI3 with methylamino organic cations and Rb inorganic cations.

[0030] The preparation method of the lead-free organic-inorganic cation hybrid perovskite material and its thin film comprises the following steps:

[0031] S1. Mix BiI3, methyl iodide, and RbI in a stoichiometric ratio of 1:2:1 and grind them in a mortar for 15 minutes to obtain a brown-black lead-free organic-inorganic cation hybrid perovskite material;

[0032] S2. Put the perovskite material obtained in step S1 into a mold, press and form it under a pressure of 45MPa, and then vacuum seal to obtain a perovskite target;

[0033]S3. Put the perovskite target material obtained in step S2 into the vacuum magnetron sputtering table, and evacuate to 10 -5 Pa, fill it with argon gas to 0.65Pa, turn on the radio frequency power supply and perform magnetron sputtering. After the thickness of the film reaches 5...

Embodiment 2

[0035] A lead-free organic-inorganic cation co-hybridized perovskite material is obtained by co-hybridizing BiI3 with methylamino organic cations and Cs inorganic cations.

[0036] The preparation method of the lead-free organic-inorganic cation hybrid perovskite material and its thin film comprises the following steps:

[0037] S1. Mix BiI3, methyl iodide, and CsI in a stoichiometric ratio of 1:2:1 and put them into a mortar for 15 minutes to grind to obtain a brown-black lead-free organic-inorganic cation hybrid perovskite material;

[0038] S2. Put the perovskite material obtained in step S1 into a mold, press and form it under a pressure of 45MPa, and then vacuum seal to obtain a perovskite target;

[0039] S3. Put the perovskite target material obtained in step S2 into the vacuum magnetron sputtering table, and evacuate to 10 -5 Pa, fill it with argon gas to 0.65Pa, turn on the radio frequency power supply and perform magnetron sputtering. After the thickness of the film...

Embodiment 3

[0041] A lead-free organic-inorganic cation co-hybridized perovskite material is obtained by co-hybridizing BiI3 with methylamino organic cations and K inorganic cations.

[0042] The preparation method of the lead-free organic-inorganic cation hybrid perovskite material and its thin film comprises the following steps:

[0043] S1. Mix BiI3, methyl iodide, and KI according to the stoichiometric ratio of 1:2:1 and put them into a mortar for grinding for 15 minutes to obtain a brown-black lead-free organic-inorganic cation co-hybridized perovskite material;

[0044] S2. Put the perovskite material obtained in step S1 into a mold and press it under a pressure of 55 MPa, and then vacuum seal to obtain a perovskite target;

[0045] S3. Put the perovskite target material obtained in step S2 into the vacuum magnetron sputtering table, and evacuate to 10 -5 Pa, fill it with argon gas to 0.65Pa, turn on the radio frequency power supply and perform magnetron sputtering. After the thick...

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Abstract

The invention discloses a preparation method of a lead-free organic and inorganic cation common hybridization perovskite material and a film thereof. Common hybridization of BiI3 is performed by employing organic cations including methylamino or ethylamino and inorganic cations including Rb or Cs to obtain the lead-free organic and inorganic cation common hybridization perovskite material, and the lead-free organic and inorganic cation common hybridization perovskite film is prepared by employing the magnetron sputtering method. The invention relates to the field of solar photoelectric materials and semiconductor materials. According to the method, Bi replaces Pb and becomes the central ion of the perovskite material so that potential pollution of the perovskite material on the environment is avoided; besides, the perovskite material obtained by common hybridization of Bi and organic and inorganic cations has low band gaps so that electron transition is facilitated, and the photoelectric conversion efficiency is improved.

Description

technical field [0001] The invention relates to the fields of solar photoelectric materials and semiconductor materials, in particular to a preparation method of a lead-free organic-inorganic cation co-hybridized perovskite material and a film thereof. Background technique [0002] With the development of human society and the increasing energy consumption, the development of solar photovoltaic technology has undoubtedly attracted the attention of human beings. Perovskite materials, as one of the "Top Ten Scientific and Technological Breakthroughs in the World" in 2013, are considered to be the most promising new materials for the development of high-efficiency solar cells. At present, the highest conversion efficiency of perovskite solar cells has reached 22.1%. [0003] Perovskite in perovskite solar cells is generally an organic-inorganic hybrid ABX3 type compound, where A is methylamino, ethylamine or inorganic K, Rb, Cs plasma; B is a metal ion such as Pb, Sn or Ti, X...

Claims

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Application Information

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IPC IPC(8): H01L51/46H01L51/48
CPCH10K71/164H10K85/30Y02E10/549
Inventor 马瑞新王成彦李士娜武东赵卫爽马梓瑞
Owner 广州光鼎科技集团有限公司
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