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Preparation method of adopting pulsed laser sputtering deposition of fishing net SiOx film on negative current collector material

A technology of laser sputtering and current collectors, which is applied in the field of lithium-ion batteries, can solve the problems of weak binding force between active materials and current collectors and uneven distribution of active materials, so as to avoid adverse effects on electrochemical performance, easy operation and high efficiency. The effect of specific capacity

Inactive Publication Date: 2017-04-26
TIANJIN UNIV
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

However, this method of assembling the negative electrode may cause uneven distribution of the active material on the surface of the current collector, the amount of active material per unit area is small, and the binding force between the active material and the current collector is too weak.

Method used

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  • Preparation method of adopting pulsed laser sputtering deposition of fishing net SiOx film on negative current collector material
  • Preparation method of adopting pulsed laser sputtering deposition of fishing net SiOx film on negative current collector material
  • Preparation method of adopting pulsed laser sputtering deposition of fishing net SiOx film on negative current collector material

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Experimental program
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Effect test

Embodiment 1

[0018] Embodiment 1: the preparation of the Cu foil of the SiOx film deposited with the network texture structure supported by micron-scale particles, the steps are:

[0019] Step 1. Clean the silicon wafer in acetone, deionized water, and ethanol ultrasonic baths for 10 minutes respectively; use the silicon wafer as the target material and the Cu foil as the substrate, and fix the Cu foil substrate and the silicon wafer on the sample stage at the same time , adjusting the angle between the silicon wafer and the Cu foil substrate to be 60°, and the incident direction of the laser is within the range of ±5° of the bisector of the angle between the silicon wafer and the Cu foil substrate;

[0020] Step 2. Close the vacuum chamber and evacuate to 1×10 4 After Pa, the flow rate of oxygen is 2L / min, which is used as background gas to participate in the reaction, and the vacuum degree is 1×10 during laser sputtering. -2 Pa;

[0021] Step 3. Adjust the laser pulse width of the puls...

Embodiment 2

[0023] Embodiment 2: the preparation of the foamed Fe of the SiO film that is deposited with the network texture structure supported by micron-scale particles, the steps are:

[0024] Step 1. Clean the silicon wafer in acetone, deionized water, and ethanol ultrasonic bath for 10 minutes respectively; use the silicon wafer as the target material, and use the foamed Fe as the substrate, and fix the foamed Fe substrate and the silicon wafer on the sample stage at the same time , adjusting the angle between the silicon wafer and the foamed Fe substrate to be 40°, and the incident direction of the laser is within the range of ±5° of the angle bisector between the silicon wafer and the foamed Fe substrate;

[0025] Step 2. Close the vacuum chamber and evacuate to 1×10 5 After Pa, the flow rate of oxygen is 1L / min, which is used as background gas to participate in the reaction, and the vacuum degree during laser sputtering is 1×10 -3 Pa;

[0026] Step 3. Adjust the laser pulse widt...

Embodiment 3

[0027] Embodiment 3: the preparation of the foamed Ni of the SiOx film that is deposited with the network texture structure supported by micron-scale particles, the steps are:

[0028] Step 1. Clean the silicon wafer in acetone, deionized water and ethanol ultrasonic bath for 10 minutes respectively; use the silicon wafer as the target material and foam Ni as the substrate, and fix the foam Ni substrate and the silicon wafer on the sample stage at the same time , adjust the angle between the silicon wafer and the foamed Ni substrate to be 80°, and the incident direction of the laser is within the range of ±5° of the angle bisector between the silicon wafer and the foamed Ni substrate;

[0029] Step 2. Close the vacuum chamber and evacuate to 5×10 4 After Pa, the flow rate of oxygen is 0.5L / min, which is used as background gas to participate in the reaction, and the vacuum degree during laser sputtering is 5×10 -3 Pa;

[0030] Step 3. Adjust the laser pulse width of the pulse...

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Abstract

The invention discloses a preparation method of adopting pulsed laser sputtering deposition of a fishing net SiOx film on a negative current collector material. The method comprises the steps of taking a silicon wafer as a sputtering target material and the negative current collector material as a deposition substrate, simultaneously fixing the negative current collector material and the silicon wafer on a sample platform, and reacting the target material silicon wafer with a background gas oxygen under an ablation effect of laser light to generate SiOx deposited on the negative current collector material substrate by adopting a pulsed laser sputtering deposition method. The prepared negative current collector material deposited with the SiOx film is taken as a negative electrode of a lithium-ion battery and is a negative electrode material, with high capacity and cycle stability, of the lithium-ion battery, and no binder or conductive agent is added, so that the adverse effects of the additive on the electrochemical properties of the negative electrode material are avoided. The preparation method is low in implementation cost, simple and convenient to operate and high in controllability, and is an efficient and economic synthesis method.

Description

technical field [0001] The invention relates to a method for preparing a negative electrode of a lithium-ion battery by depositing a fishnet-shaped SiOx film by laser sputtering, which is mainly used in the field of lithium-ion batteries. Background technique [0002] Lithium-ion batteries, as an energy storage method with high energy density and excellent cycle performance, have attracted widespread attention. Many researchers are working to improve the capacity and cycle stability of lithium-ion batteries to meet the new requirements brought about by the development of electronic drive devices. [0003] Zhong Minlin et al., dispersed the dandelion-shaped SiOx produced by 532nm laser ablation of silicon wafers in the air in alcohol, dropped it on the surface of copper foil, and rolled it after drying. After 800 cycles, it still maintained a capacity of 960mAhg-1 , which is better than hollow cubic SiO 2 The capacity after 30 cycles measured by coating method is 919mAhg -...

Claims

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Application Information

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IPC IPC(8): H01M4/139H01M4/04H01M10/0525
CPCH01M4/0426H01M4/139H01M10/0525H01M2004/027Y02E60/10
Inventor 魏强黄欢欢卢红张立宪
Owner TIANJIN UNIV
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