Sulfur-doped carbon nitride photocatalyst as well as preparation method and application thereof

A carbon nitride light and sulfur doping technology, applied in physical/chemical process catalysts, chemical instruments and methods, chemical/physical processes, etc., can solve the problems of small specific surface area, reduced absorption, and unsatisfactory photocatalytic performance, etc. Achieve the effect of large specific surface area, strong light absorption, strong photocatalytic degradation ability

Inactive Publication Date: 2017-05-17
SHENYANG INST OF AUTOMATION GUANGZHOU CHINESE ACAD OF SCI +1
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

The g-C obtained by this method 3 N 4 The specific surface area is small and the absorption of light is reduced, so the photocatalytic performance is often not ideal

Method used

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  • Sulfur-doped carbon nitride photocatalyst as well as preparation method and application thereof
  • Sulfur-doped carbon nitride photocatalyst as well as preparation method and application thereof
  • Sulfur-doped carbon nitride photocatalyst as well as preparation method and application thereof

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0035] Put 10g of thiourea in a crucible and cover it, calcined in a muffle furnace, the calcining temperature is 550°C, the holding time is 4 hours, and the heating rate is 2.3°C / min; after natural cooling, it is ground into powder to obtain sulfur-doped graphite Phase carbon nitride (CN-T-1), weighed 1.2g and put it in a crucible without a cover, spread it out, and calcined again. The calcining temperature was 500°C, the holding time was 2 hours, and the heating rate was 5°C / min . After natural cooling, a high specific surface area modified carbon nitride photocatalyst (CN-T-2) was obtained with a yield of about 12%.

[0036] The photocatalyst prepared in embodiment 1 is carried out XPS, DRS, XRD etc. characterization, the result is as follows Figure 1-7 shown.

[0037] in conclusion: Figure 1~4 Shown are the XPS diagrams of C, O, N, and S of CN-T-2 respectively. It can be seen from the figure that the composition and valence state of C, O, and N are consistent with tho...

Embodiment 2

[0042] Put 10g of thiourea in a crucible and cover it, calcined in a muffle furnace, the calcining temperature is 550°C, the holding time is 4 hours, the heating rate is 2.3°C / min; after natural cooling, grind it into powder, weigh 1.2g Put it in a crucible without a cover, spread it out, and calcinate again, the calcining temperature is 500°C, the holding time is 1.0 hour, and the heating rate is 5°C / min. After natural cooling, a high specific surface area modified carbon nitride photocatalyst (CN-T-21 hours) was obtained, and the yield was about 18%.

Embodiment 3

[0044] Put 10g of thiourea in a crucible and cover it, calcined in a muffle furnace, the calcining temperature is 550°C, the holding time is 4 hours, the heating rate is 2.3°C / min; after natural cooling, grind it into powder, weigh 1.2g Put it in a crucible without a cover, spread it out, and calcinate again, the calcining temperature is 500°C, the holding time is 3 hours, and the heating rate is 5°C / min. After natural cooling, a high specific surface area modified carbon nitride photocatalyst (CN-T-23 hours) was obtained with a yield of about 8%.

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Abstract

The invention discloses a preparation method of a sulfur-doped carbon nitride photocatalyst. The preparation method comprises the following steps: S1, calcining thiourea at 500 DEG C to 650 DEG C and keeping warm for 2h to 6h, so as to obtain sulfur-doped graphite carbon nitride; S2, grinding the sulfur-doped graphite carbon nitride obtained by the step S1 into powder; calcining at 400 DEG C to 550 DEG C again and keeping heat for 1h to 4h. The invention further discloses the sulfur-doped carbon nitride photocatalyst prepared by the preparation method of the sulfur-doped carbon nitride photocatalyst and application of the sulfur-doped carbon nitride photocatalyst. The sulfur-doped carbon nitride photocatalyst prepared by the invention has larger specific surface area and better photocatalytic activity; the steps of the preparation method are simple to operate and the catalyst has high activity and good stability.

Description

technical field [0001] The invention relates to the field of photocatalysts, in particular to a sulfur-doped carbon nitride photocatalyst and its preparation method and application. Background technique [0002] With the increasing energy crisis, the development of new energy sources has attracted worldwide attention, among which how to efficiently utilize solar energy has always been a hot research topic. In the past few decades, different kinds of photocatalysts have been widely used, such as metal oxides, sulfides and nitrides (TiO 2 , ZnO, Fe 2 o 3 , SnO 2 、WO 3 , CdS), etc., where TiO 2 It is favored by people for its high activity, good thermal stability, long duration, low price, and harmless to human body. Due to TiO 2 It has high photocatalytic oxidation activity for many organic pollutants, so it also plays an extremely important role in environmental pollution control, and is widely used in photocatalytic treatment of various organic substances. But due to...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): B01J27/24C02F1/30C02F101/38
CPCB01J27/24B01J35/004C02F1/30C02F2101/38C02F2305/10
Inventor 陈志鸿吕海钦孟庆国苑明哲
Owner SHENYANG INST OF AUTOMATION GUANGZHOU CHINESE ACAD OF SCI
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