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Phase self-compensation infrared detector readout circuit

A technology for infrared detectors and readout circuits, applied in electrical radiation detectors, instruments, measuring devices, etc., can solve the problems of increasing circuit noise, increasing circuit chip area, and complex circuit structure, and achieving increased swing and reduced design. Complexity, the effect of reducing power consumption

Active Publication Date: 2017-05-24
SHANGHAI INST OF TECHNICAL PHYSICS - CHINESE ACAD OF SCI
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

At present, due to the limitation of the standard low-temperature model in CMOS circuit design, the low-temperature working state of the circuit cannot be guaranteed. Most CMOS amplifier circuits are prone to oscillation at low temperatures due to changes in the phase margin at low temperatures, and a more complex phase margin needs to be added. The circuit with high degree of compensation not only increases the area of ​​the circuit chip but also increases the noise of the circuit
[0003] In response to the above problems, some related research has been carried out on low-temperature CMOS readout circuits at home and abroad, but in practical applications, the low-temperature stability and low noise still need to be further improved.
For example: patent CN103913700A discloses a detection circuit of an infrared focal plane readout circuit, but the circuit structure itself is complicated, including test circuits, detection circuits, integration circuits, sample and hold circuits, etc., and low temperature stability cannot be guaranteed. Output noise performance could be improved

Method used

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  • Phase self-compensation infrared detector readout circuit
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  • Phase self-compensation infrared detector readout circuit

Examples

Experimental program
Comparison scheme
Effect test

Embodiment approach 1

[0016] figure 1 This is the phase self-compensation CTIA topology diagram. The differential amplifier circuit adopts a one-stage folded cascode structure with differential input. C4 is the phase self-compensation capacitor, and its size is set to be greater than 1pF, so that the circuit has a large The phase margin ensures that the circuit can work normally at low temperature. The integral capacitor is composed of three capacitors, C1, C2, and C3, whose sizes are 1pF, 2pF, and 2pF. Controlled by the selection switch S2, different combinations form different magnifications, and the circuit can adapt to the requirements of different response rates of infrared detectors. When both S1 and S2 are high, the total integral capacitance is 5pF, which is suitable for reading signals with high response rate; when both S1 and S2 are low, the total integral capacitance is 1pF, which is suitable for reading signals with low response rate out. The amplifier adopts a differential amplifier,...

Embodiment approach 2

[0019] figure 2 It is a structural diagram of the phase self-compensation readout circuit unit, including an input integration circuit, a self-compensation capacitor, CDS (correlated double sampling) N-follower, P-follower output. The positive terminal of the differential amplifier is connected to Vref, the negative terminal is the input terminal of the integral current, the integral capacitor Ci is connected between the negative input terminal and the output terminal of the differential amplifier, and the self-compensation capacitor is connected between the output terminal of CTIA and the relevant double sampling CDS , the self-compensating capacitor can make the circuit have a sufficiently large phase margin at low temperature so that the circuit does not oscillate. In order to read out the detector signals of the long line column sequentially, it is necessary to add N follower in the output part of the circuit, followed by P follower. The output signal of CTIA is stored o...

Embodiment approach 3

[0021] The output end of the circuit adopts the structure of N-follower and P-follower of CDS. This output structure can make the output swing of the circuit larger than 2V. The N-follower circuit structure of CDS is as follows image 3 As shown, the N-following part is only turned on when the column selection terminal col is at a low level, and has power consumption. When the column selection terminal col is at a high level, the N-following part is turned off and has almost no power consumption, so the readout circuit is a low-power consumption structure. The power consumption is very small, and the unit power consumption of the long line column circuit is less than 1 milliwatt. The voltage at the col end is provided by the shift register, which controls the long-line column signals to be read out in sequence.

[0022] sha and shb are two sampling pulses, and shaf and shbf are complementary pulses of sha and shb, which control the output signal of CTIA to be transmitted to th...

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Abstract

The invention discloses a phase self-compensation infrared detector readout circuit. The circuit is a phase self-compensation CTIA (capacitor feedback transimpedance amplifier) readout circuit; a CTIA output end adopts a phase self-compensation capacitor, so that the circuit can be subjected to quick phase self-compensation under low temperature; an input integral circuit adopts a capacitor feedback transimpedance amplifier in a primary cascode structure, and an integrating capacitor in the integral circuit is a multistage amplification structure formed by three capacitors connected in parallel, so that readout of detector signals in different response rates can be met; and a CDS output end adopts a low-power-consumption N tube follower structure controlled by a switch, and thus the total power consumption of the circuit is reduced greatly. The advantages are that the circuit is simple in structure, can realize phase self-compensation under low temperature, is low in power consumption, is capable of realizing magnification time multi-stage tunableness and can work normally from normal temperature to liquid nitrogen low temperature.

Description

technical field [0001] The invention relates to the field of infrared detector readout circuits, in particular to a phase self-compensating CMOS infrared detector readout circuit. Background technique [0002] At present, infrared detection imaging has been widely used in military, aerospace, biomedicine and national economy and other fields. According to Planck's radiation theorem, any object with a temperature higher than absolute zero will have molecular thermal motion inside it, thereby producing infrared radiation with different wavelengths. Infrared radiation has an important feature that its intensity and wavelength are directly related to the surface temperature of the object, providing rich information about the object. However, infrared radiation is an invisible electromagnetic wave. When using infrared radiation to obtain information about objects, it is necessary to convert this infrared radiation into a measurable signal. The infrared detector readout circuit ...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): G01J5/02G01J5/34G01J5/20G01J5/10
CPCG01J5/02G01J5/10G01J5/20G01J5/34
Inventor 袁红辉
Owner SHANGHAI INST OF TECHNICAL PHYSICS - CHINESE ACAD OF SCI