Unlock instant, AI-driven research and patent intelligence for your innovation.

Layer systems for thin-film solar cells

A technology of solar cells and layer systems, applied in circuits, electrical components, photovoltaic power generation, etc., can solve problems such as low efficiency and achieve high efficiency

Active Publication Date: 2020-06-09
(CNBM) BENGBU DESIGN & RES INST FOR GLASS IND CO LTD
View PDF10 Cites 0 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, in the development of these layer systems to date, it has been demonstrated that solar cells with an InS buffer layer are less efficient than solar cells with a CdS buffer layer

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Layer systems for thin-film solar cells
  • Layer systems for thin-film solar cells
  • Layer systems for thin-film solar cells

Examples

Experimental program
Comparison scheme
Effect test

Embodiment Construction

[0069] figure 1 An exemplary embodiment of a thin-film solar cell 100 according to the invention with a layer system 1 according to the invention is depicted purely schematically in a cross-sectional view. The thin film solar cell 100 includes a substrate 2 and a back electrode 3 . The layer system 1 according to the invention is arranged on the back electrode 3 . The layer system 1 according to the invention comprises an absorber layer 4 , a first cushioning layer 5 and optionally a second cushioning layer 6 . The front electrode 7 is arranged on the layer system 1 .

[0070] The substrate 2 is made here, for example, of inorganic glass, wherein it is also possible to use other insulating materials having sufficient stability and inert behavior with respect to the process steps performed during the production of the thin-film solar cell 100, such as plastics, especially polymers or metals, especially metal alloys. Depending on the layer thicknesses and specific material p...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

No PUM Login to View More

Abstract

A layer system (1) for a thin-film solar cell (100), comprising: an absorber layer (4) comprising a chalcogenide semiconductor; and a buffer layer (5) arranged on the absorber layer (4) , where the buffer layer (5) has the formula A x In y S z A semiconductor material where A is potassium (K) and / or cesium (Cs), where 0.015≤x / (x+y+z)≤0.25 and 0.30≤y / (y+z)≤0.45.

Description

technical field [0001] The present invention is in the technical field of the production of solar cells and solar modules, and relates to layer systems for thin-film solar cells and methods for producing such layer systems. Background technique [0002] Thin-film systems for solar cells and solar modules are sufficiently known and available on the market in various designs depending on the substrate and the materials applied thereon. Materials are chosen such that the incident solar spectrum is utilized to the maximum extent possible. Due to physical properties and technical processing qualities, with amorphous, microcrystalline or polycrystalline silicon, cadmium telluride (CdTe), gallium arsenide (GaAs), copper indium (gallium) sulfur selenide (Cu(In,Ga)(S, Se) 2 ) and copper-zinc-tin-selenide-sulfur (CZTS from the sulfur-copper-tin-zinc family) semiconductors as well as thin-film systems of organic semiconductors are particularly suitable for solar cells. Quinary Semic...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
Patent Type & Authority Patents(China)
IPC IPC(8): H01L31/0264H01L31/0725H01L31/0445H01L31/18
CPCH01L31/0749Y02E10/541Y02P70/50H01L31/0445H01L31/03923H01L31/032H01L31/022425H01L31/022441H01L31/0324H01L31/0336H01L31/0352H01L31/072H01L31/18
Inventor J.帕尔姆S.波尔纳T.哈普T.达利博尔R.迪特米勒R.弗马
Owner (CNBM) BENGBU DESIGN & RES INST FOR GLASS IND CO LTD