A method for improving the quality of doped diamond-like carbon film

A diamond film, high-quality technology, applied in the direction of metal material coating process, coating, gaseous chemical plating, etc., can solve the problems of uneven carbon plasma density distribution, difficult to achieve film quality, etc., and achieve friction coefficient controllable effect

Active Publication Date: 2019-07-09
BEIJING NORMAL UNIVERSITY
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  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

[0004] Industrialized production is based on the magnetic filter plasma deposition method of arc discharge technology. Due to the rotation of the workpiece and the extremely uneven plasma density on the surface of the workpiece when preparing a thick hydrogen-containing diamond film layer, the carbon plasma density distribution near the circumference of the workpiece is extremely uneven. , and finally the film quality is difficult to reach the film quality achieved during fixed deposition, such as film hardness, sp 3 content, coefficient of friction, etc.

Method used

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  • A method for improving the quality of doped diamond-like carbon film
  • A method for improving the quality of doped diamond-like carbon film
  • A method for improving the quality of doped diamond-like carbon film

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Effect test

Embodiment 1

[0020] In order to solve the current problems of film brittleness and bonding force deviation around the workpiece, which do not meet the requirements of industrial applications, this embodiment provides a method for improving the quality of the doped diamond-like film layer, and plasma chemical vapor deposition doping is carried out on the workpiece. Before the diamond-like film layer, a shielding device is placed around the rotating workpiece. figure 1 The schematic diagram of the structure of the shielding device provided by the embodiment of the present invention, such as figure 1 As shown, the shielding device has a shielding device body 1 and an opening 2 . Preferably, in order to selectively deposit plasma with a certain plasma density, the opening angle of the opening 2 of the shielding device can be adjusted. During the deposition process, the opening 2 of the shielding device faces the plasma outlet, and the shielding device body 1 does not rotate with the workpiece...

Embodiment 2

[0026] Without adding a screen device, the cylindrical workpiece was deposited for 300 minutes while the workpiece was fixed, and the performance of the film layer in the circumferential direction was tested. The test results are shown in Table 1 below.

[0027]

[0028] Table 1

[0029] It can be seen from Table 1 that without adding a screen device and depositing when the cylindrical workpiece is fixed, the brittleness and bonding force of the obtained film layer meet the requirements, and some deviations, that is, the uniformity of the obtained film layer is not enough.

Embodiment 3

[0031] No screen device was added, and the cylindrical workpiece was deposited for 300 minutes during autobiography, and the performance of the film layer in the circumferential direction was tested. The test results are shown in Table 2 below.

[0032]

[0033] Table 2

[0034] It can be seen from Table 2 that without adding a screen device, the hardness of the obtained film layer is obviously soft when the cylindrical workpiece is self-propelled, and the film layer is brittle and has deviations in bonding force. The quality of the film layer cannot reach the level achieved when the workpiece is fixed. The achieved film quality does not meet the requirements for industrial applications.

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Abstract

The invention relates to a method for improving quality of a doped DLC (diamond-like carbon) film. A shielding device is arranged around a workpiece before plasma CVD (chemical vapor deposition) of the doped DLC film on the workpiece, and an opening is formed in the shielding device and directly faces a plasma outlet; during plasma CVD of the doped DLC film, the shielding device does not rotate with the workpiece but is equipotential with the workpiece. According to the method provided by the embodiment, the shielding device is mainly arranged around the rotating workpiece during deposition, so that the position with extremely uneven plasma density distribution nearby the circumference of the workpiece is shielded, only deposition of high-density ions of plasma right facing the plasma outlet is received, the uniformity, binding force and the like of the finally obtained film are greatly improved, and the method is quite suitable for industrial mass production.

Description

technical field [0001] The technical field of surface treatment of the present invention relates in particular to a method for improving the quality of a doped diamond-like carbon film. Background technique [0002] Carbon-based coatings such as tetrahedral diamond-like carbon (ta-diamond-like carbon, referred to as ta-DLC) film is an amorphous material composed of carbon as the basic element. Diamond-like carbon film (DLC), which belongs to amorphous carbon with amorphous metastable structure in structure, is composed of sp 3 hybridization and sp 2 Hybrid carbon composition: sp in film 3 The structure determines that the diamond-like carbon film has many excellent properties similar to diamond, and the sp2 structure determines that the diamond-like carbon film has many characteristics of graphite. diamond film. [0003] In terms of preparation process, the deposition temperature of diamond-like carbon film (DLC) is relatively low, the deposition area is large, the film ...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): C23C16/26C23C16/50
CPCC23C16/26C23C16/50
Inventor 廖斌欧阳晓平张旭吴先映韩然张丰收
Owner BEIJING NORMAL UNIVERSITY
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