Vertical-cavity surface-emitting laser array for full-color display illumination

A technology of vertical cavity surface emission and laser array, which is applied in the direction of lasers, laser components, semiconductor lasers, etc., to achieve the effects of wide color gamut display lighting applications, simplified process steps, and easy control

Inactive Publication Date: 2017-05-31
XIAMEN UNIV
View PDF4 Cites 8 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0005] The purpose of the present invention is to provide a low-threshold, long-lasing wavelength green vertical cavity surface emitting laser to solve the "green gap" problem and realize

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Vertical-cavity surface-emitting laser array for full-color display illumination
  • Vertical-cavity surface-emitting laser array for full-color display illumination
  • Vertical-cavity surface-emitting laser array for full-color display illumination

Examples

Experimental program
Comparison scheme
Effect test

Example Embodiment

[0018] In order to make the objectives, technical solutions, and advantages of the present invention clearer, the following further describes the present invention in detail in conjunction with specific embodiments and with reference to the accompanying drawings.

[0019] See figure 1 The embodiment of the present invention is provided with a heat dissipation copper substrate 101, a bonding layer 102, a current spreading and P-type electrode 104, a current confinement layer 105, a P-type GaN layer 106, a quantum dot active region 107, and an N-type GaN from bottom to top. Layer 108 and N-type electrode 109; the N-type GaN layer 108, the quantum dot active region 107 and the P-type GaN layer 106 are sequentially grown on the heat dissipation copper substrate 101, and the current confinement layer 105 is deposited on the P-type GaN layer 106 , A P-type current injection hole is opened in the current confinement layer 105, the current expansion and P-type electrode 104 are grown in t...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to view more

PUM

No PUM Login to view more

Abstract

The invention discloses a vertical-cavity surface-emitting laser array for full-color display illumination and relates to semiconductor lasers. The vertical-cavity surface-emitting laser array is provided with a radiator copper substrate, a bonding layer, a current spreading and P-type electrode, a current limit layer, a P-type GaN layer, a quantum dot active area, an N-type GaN layer and an N-type electrode from bottom to top. The N-type GaN layer, the quantum dot active area and the P-type GaN layer sequentially grow on the radiator copper substrate; the current limit layer deposits on the P-type GaN layer and is provided with a P-type current injection hole; the current spreading and P-type electrode grows in the injection hole; the P-type electrode and a bottom distributed Bragg reflector are deposited in the current spreading and P-type electrode; the bonding layer is bonded between the bottom distributed Bragg reflector and the radiator copper substrate; the N-type electrode and a top distributed Bragg reflector are deposited on the N-type GaN layer; an a resonant cavity is formed between the bottom distributed Bragg reflector and the top distributed Bragg reflector.

Description

technical field [0001] The present invention relates to semiconductor lasers, and more particularly to vertical cavity surface emitting laser arrays for full-color display illumination. Background technique [0002] Compared with solid-state lasers and gas lasers, semiconductor lasers have received more attention and research due to their small size, low power consumption, and low cost. Based on the forbidden band width of different semiconductor materials, semiconductor lasers can cover a wide spectral range from ultraviolet to infrared. At present, semiconductor lasers with different wavelengths have been successfully developed and commercialized. For example, 2-5μm lasers are used in biomedical applications, 1.3-1.55μm lasers are used in optical communication applications, 850-1000nm lasers are used in optical interconnection technology, 405- 450nm lasers are used in applications such as lithography and lighting. However, in the green light band, especially 500-600nm, t...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to view more

Application Information

Patent Timeline
no application Login to view more
IPC IPC(8): H01S5/183H01S5/187
CPCH01S5/18397H01S5/187
Inventor 郑志威张保平沃纳·霍夫曼梅洋
Owner XIAMEN UNIV
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Try Eureka
PatSnap group products

Browse by: Latest US Patents, China's latest patents, Technical Efficacy Thesaurus, Application Domain, Technology Topic.

© 2024 PatSnap. All rights reserved.Legal|Privacy policy|Modern Slavery Act Transparency Statement|Sitemap