Deep silicon etching method and manufacturing method of silicon-based MEMS (Micro-electromechanical Systems) motion sensor

Abstract

The invention discloses a deep silicon etching method. The deep silicon etching method comprises the following steps: step 11, defining a region needing to be etched on a silicon wafer by adopting a photoetching technology; step 12, carrying out deep silicon etching on the defined region by adopting a BOSCH etching process; step 13, carrying out a dry-method stripping technology of photoresist, wherein temperature of the dry-method stripping technology is set to a low-temperature range capable of avoiding hardening of a polymer; step 14, carrying out a wet-method stripping technology of the photoresist. The invention further discloses a manufacturing method of the silicon-based MEMS motion sensor. By adopting the deep silicon etching method, polymer residues can be reduced and electrode pieces at two sides of a groove are prevented from being adhesion together, so that the yield of a product can be improved.

Description

technical field [0001] The invention relates to a semiconductor integrated circuit manufacturing process method, in particular to a deep silicon etching method. The invention also relates to a manufacturing method of the silicon-based MEMS motion sensor. Background technique [0002] like figure 1 Shown is a schematic diagram of a silicon-based MEMS motion sensor, including three silicon wafers bonded together, namely a first silicon wafer 101 , a second silicon wafer 102 and a third silicon wafer 103 . [0003] Wherein, the main part of the silicon-based MEMS motion sensor is formed on the second silicon wafer 102, the first silicon wafer 101 is used as the capping layer of the second silicon wafer 102, and the CMOS integrated circuit is formed on the second silicon wafer 103, Silicon-based MEMS motion sensors are controlled by CMOS integrated circuits. [0004] A cavity 1 is formed on the first silicon wafer 101 . [0005] The main part of the silicon-based MEMS motion...

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Problems solved by technology

[0014] At the same time, the silicon-based MEMS motion sensor formed by the existing method is also prone to the defect that the fixed electrode and the movable electrode are bonded together (stiction), such as image 3 Shown is a photo of the adhesion defect produced by the fixed electrode and the movable electrode of the silicon-based MEMS motion sensor formed by the existing method; image 3 The middle marks 203 and 204 correspond to the fixed electrode and the movable electrode respectively, and the two electrodes are normally separated by grooves 3 , but image 3 The fixed electrode and the movable electrode are bonded together, which will also cause the device to fail, which will reduce the yield of the product

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