Microwave plasma chemical vapor deposition diamond reaction device

A technology of chemical vapor deposition and microwave plasma, which is applied in gaseous chemical plating, metal material coating process, coating, etc., can solve diamond pollution and other problems, and achieve the effects of avoiding pollution, avoiding damage, and reducing production costs

Active Publication Date: 2017-06-13
于宗旭
View PDF5 Cites 8 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

Since the quartz tube or quartz ring is close to the plasma, it will also be damaged by etching and contamination of the diamond.

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Microwave plasma chemical vapor deposition diamond reaction device
  • Microwave plasma chemical vapor deposition diamond reaction device
  • Microwave plasma chemical vapor deposition diamond reaction device

Examples

Experimental program
Comparison scheme
Effect test

Embodiment Construction

[0023] In order to enable those skilled in the art to better understand the present invention, the present invention will be further clearly and completely described below in conjunction with reference to the accompanying drawings and in conjunction with embodiments. It should be noted that, in the case of no conflict, the embodiments in the present application and the features in the embodiments can be combined with each other.

[0024] Such as figure 1As shown, a microwave plasma chemical vapor deposition diamond reaction device includes a resonant cavity, and the resonant cavity is divided into an upper cylindrical cavity 1, a middle arc-shaped cavity 2 and a lower cylindrical cavity 3. Among them, the middle arc-shaped cavity 2 is a spherical cavity with the upper and lower parts cut off, the radius of curvature R of the middle arc-shaped cavity 2 is equal to the microwave wavelength λ, and the diameter of the upper cylindrical cavity 1 is larger than the middle circle Th...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to view more

PUM

PropertyMeasurementUnit
diameteraaaaaaaaaa
diameteraaaaaaaaaa
diameteraaaaaaaaaa
Login to view more

Abstract

The invention discloses a microwave plasma chemical vapor deposition diamond reaction device which comprises a resonator cavity, wherein the resonator cavity is composed of an upper cylindrical cavity, a middle arc cavity and a lower cylindrical cavity; the curvature radius of the middle arc cavity is equal to microwave wavelength; a reactive gas inlet is formed in a top cover of the upper cylindrical cavity, and a quartz clock cover medium window and a coaxial probe antenna are mounted on the top cover of the upper cylindrical cavity; an air inlet pipe and an air outlet hole are arranged on the coaxial probe antenna; a reflective plate and a cylindrical lifting base are arranged in the lower cylindrical cavity; a reactive gas outlet is formed in the reflective plate; and a total reactive gas outlet is formed in the bottom plate of the lower cylindrical cavity. The device disclosed by the invention has the advantages of high focusing capability, capacity of containing high input power, simple structure, convenience in manufacture and the like.

Description

technical field [0001] The invention relates to the technical field of chemical vapor deposition, in particular to a microwave plasma chemical vapor deposition diamond reaction device for plasma chemical vapor deposition. Background technique [0002] Diamond has excellent physical and chemical properties, and has broad application prospects in many fields of the national economy. Among the many methods for preparing diamond, the microwave plasma chemical vapor deposition (MPCVD) method uses microwave electromagnetic field energy to excite plasma without causing electrode contamination, and is the preferred method for preparing high-quality diamond. Improving the deposition rate and quality of diamond has always been the goal pursued by scientific and technological workers and enterprises. Plasma density is a key factor affecting the deposition rate and quality of diamond. Therefore, in order to obtain high-density plasma, it is necessary for the MPCVD device to have a stro...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to view more

Application Information

Patent Timeline
no application Login to view more
Patent Type & Authority Applications(China)
IPC IPC(8): C23C16/27C23C16/455C23C16/511C23C16/513
CPCC23C16/274C23C16/276C23C16/45502C23C16/511C23C16/513
Inventor 于宗旭
Owner 于宗旭
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Try Eureka
PatSnap group products