Method for forming fin field effect transistor

Abstract

A formation method of a fin field-effect transistor comprises the steps of providing a substrate comprising a first region and a second region, wherein fin parts are arranged on a surface of the substrate; forming sacrificial layers on the surface of the substrate, wherein the sacrificial layers cover a part of a side wall of each fin part, and surfaces of the sacrificial layers are lower than surfaces of top parts of the fin parts; forming first barrier layers on the surfaces of the side walls of the fin parts; removing the sacrificial layers; forming doping layers on the surface of the exposed side wall of the fins part on the first region, surfaces of the first barrier layers and the surfaces of the top parts of the fin parts, wherein the first types of ions are arranged in the doping layer; performing a doping process on the exposed side wall of the fin part on the second region, wherein the ions doped by the doping process are second types of ions; performing an annealing process, driving the first types of ions to be doped into the fin part on the first region, and driving the second types of ions to be doped into the fin part on the second region; and removing the first barrier layers and the doping layers. By the formation method, the performance of the formed semiconductor structure is improved.

Description

technical field [0001] The invention relates to the technical field of semiconductor manufacturing, in particular to a method for forming a fin field effect transistor. Background technique [0002] With the rapid development of semiconductor manufacturing technology, semiconductor devices are developing towards higher element density and higher integration. As the most basic semiconductor device, transistors are currently being widely used. Therefore, with the increase of component density and integration of semiconductor devices, the gate size of planar transistors is getting shorter and shorter. The ability of traditional planar transistors to control channel current Weakened, resulting in short channel effect, resulting in leakage current, and ultimately affecting the electrical performance of semiconductor devices. [0003] In order to overcome the short-channel effect of the transistor and suppress the leakage current, a Fin Field Effect Transistor (Fin FET) is propos...

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Problems solved by technology

[0004] However, as the size of semiconductor devices continues to shrink, the manufacturing process of fin field effect transistors is challenged, and it is difficult to ensure the stable performance of fin field effect transistors

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