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Transparent electrode and manufacturing method thereof

A technology of transparent electrodes and transparent substrates, which is applied in the manufacture of circuits, electrical components, and final products. It can solve problems such as high light transmittance, achieve excellent electrical conductivity, strong bending and flexibility, and expand the scope of optoelectronic applications.

Inactive Publication Date: 2017-06-13
JIANGXI NORMAL UNIVERSITY
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

[0007] However, for such a relatively thick continuous metal film layer, how to achieve high light transmittance is still a scientific problem that is difficult to effectively solve.

Method used

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  • Transparent electrode and manufacturing method thereof
  • Transparent electrode and manufacturing method thereof
  • Transparent electrode and manufacturing method thereof

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0051] refer to figure 1 As shown, this embodiment provides a transparent electrode based on a broadband optically transparent continuous metal film layer and its preparation method, which can have the inherent perfect electrical conductivity characteristics of the metal film layer and also have excellent optical transparency characteristics.

[0052] The transparent electrode includes a transparent substrate 1 , a first high dielectric film layer 2 , a metal film layer 3 , and a second high dielectric film layer 4 from bottom to top.

[0053] The metal film layer is a continuous metal film layer; the continuous metal film layer means that the film layer itself has no voids / holes or cracks. Generally, if the metal film layer is too thin, it will be just a cluster of particles rather than a complete film layer that communicates with each other.

[0054] The dielectric constant of the high dielectric film layer is greater than or equal to 6.25.

[0055] High-dielectric materia...

Embodiment 2

[0062] This embodiment provides a transparent electrode, including figure 1 The transparent substrate 1 , the first high dielectric film layer 2 , the metal film layer 3 , and the second high dielectric film layer 4 are arranged sequentially from bottom to top.

[0063] Wherein, the metal material of the metal film layer 3 is gold, the material of the high dielectric film layer is titanium dioxide, the thickness of the metal film layer 3, the thickness of the first high dielectric film layer 2 and the second high dielectric film layer 4 are respectively 15nm, 40nm, 40nm. The material of the transparent substrate 1 is polydimethylsiloxane (PDMS), a flexible substrate material, with a thickness of 5 microns.

[0064] The preparation method of the transparent electrode of this embodiment is the same as that of Embodiment 1, and will not be repeated here.

[0065] refer to figure 2 As shown, this embodiment is based on the light transmittance diagram of the transparent electro...

Embodiment 3

[0068] This embodiment provides a transparent electrode, including figure 1 The transparent substrate 1 , the first high dielectric film layer 2 , the metal film layer 3 , and the second high dielectric film layer 4 are arranged sequentially from bottom to top.

[0069] Wherein, the metal material of the metal film layer 3 is silver, the material of the high dielectric film layer is titanium dioxide, the thickness of the metal film layer 3, the thickness of the first high dielectric film layer 2 and the second high dielectric film layer 4 are respectively 15nm, 40nm, 40nm. The material of the transparent substrate 1 is polydimethylsiloxane (PDMS), a flexible substrate material, with a thickness of 5 microns.

[0070] The preparation method of the transparent electrode of this embodiment is the same as that of Embodiment 1, and will not be repeated here.

[0071] refer to image 3 As shown, this embodiment is based on the light transmittance diagram of the transparent electr...

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Abstract

The invention provides a transparent electrode and a manufacturing method thereof. The transparent electrode comprises a transparent substrate, a first high-dielectric film layer, a metal film layer and a second high-dielectric film layer, wherein the first high-dielectric film layer , the metal film layer and the second high-dielectric film layer are sequentially arranged on the transparent substrate. The metal film layer is a continuous metal film layer. The dielectric constant of each high-dielectric film is greater than or equal to 6.25. Design and preparation of high-conductivity and high-transparency transparent electrode materials are achieved by utilizing magnetic resonance characteristics of a high-dielectric material. The transparent electrode utilizes the magnetic resonance characteristics of the high-dielectric material and the coupling input and output effect of the high-dielectric material and incident light. A composite structure of the high-dielectric film layers and the continuous metal film layer can provide broadband and transparent light, a spectral range covers light ranging from visible light to infrared light, and a photoelectric application range of the transparent electrode in different frequency bands is greatly widened. In addition, the transparent electrode has stronger bending property and flexibility and is easily integrated with external structure units such as other active layers or photoelectric control modules or flexible substrates.

Description

technical field [0001] The invention belongs to the field of optoelectronic technology, and in particular relates to a transparent electrode and a preparation method thereof. Background technique [0002] Transparent electrode materials, because of their high optical transmittance and low resistivity, are widely used in various optoelectronic functional materials and devices, including solar cells, photodetection and sensors, image sensors, displays, organic light-emitting diodes and touch screens Panels, solar control films and conductor films. From an application point of view, in addition to the required high transmittance and low resistance of a wide range of spectra, transparent electrodes should also have advantages such as ease of processing (for example, the possibility of large-area preparation), and other materials. Compatibility with integration with structures (eg active layers), stability with respect to temperature, mechanical and chemical stress and electroma...

Claims

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Application Information

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IPC IPC(8): H01L31/0224H01L31/18
CPCH01L31/022408H01L31/022466H01L31/1884Y02P70/50
Inventor 刘正奇刘桂强黄镇平刘晓山
Owner JIANGXI NORMAL UNIVERSITY
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