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A Long Wavelength Vertical Cavity Surface Emitting Laser

A vertical cavity surface emission, long wavelength technology, used in lasers, laser parts, semiconductor lasers, etc., can solve the problems affecting the high-speed characteristics of the device and the large influence of series resistance, so as to achieve high-speed characteristics, increase efficiency, reduce The effect of series resistance

Active Publication Date: 2019-07-05
INST OF SEMICONDUCTORS - CHINESE ACAD OF SCI
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  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

Since the long-wavelength DBR requires more logarithms, the series resistance of the vertical cavity surface emitting laser has a greater impact, which affects the high-speed characteristics of the device

Method used

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  • A Long Wavelength Vertical Cavity Surface Emitting Laser
  • A Long Wavelength Vertical Cavity Surface Emitting Laser

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Embodiment Construction

[0029] In order to make the object, technical solution and advantages of the present invention clearer, the present invention will be further described in detail below in conjunction with specific embodiments and with reference to the accompanying drawings.

[0030] figure 1 It is a schematic structural diagram of a long-wavelength vertical cavity surface emitting laser according to a specific embodiment of the present invention. Such as figure 1 As shown, the structure includes a substrate 8, an n-type DBR6, an n-type space layer 5, an active region 4, a p-type space layer 3, and a light exit hole 9 from bottom to top, and the p-side electrode 2 is vapor-deposited on the p-type space layer 3 and surrounding the light exit hole 9, a current confinement layer 10 is provided in the middle of the n-type DBR6, and a circular current confinement hole 11 is formed on the current confinement layer 10, wherein the substrate 8 and the n-type DBR6 are frustum-shaped with equal diameter...

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Abstract

The invention discloses a long wavelength vertical cavity surface emitting laser comprising a substrate. An n-type DBR, an n-type space layer, an active region, a p-type space layer and a light emergent hole are arranged on the substrate in turn. A p surface electrode is arranged on the p-type space layer through vapor plating and surrounds the light emergent hole. A current limiting layer is arranged in the middle of the n-type DBR. A circular current limiting hole is formed on the current limiting layer. The substrate and the n-type DBR have an equal-diameter truncated cone structure of which the diameter is greater than the diameter of the light emergent hole and less than the transverse dimension of the final dissociation chip of the long wavelength vertical cavity surface emitting laser. The internal series resistance of the long wavelength vertical cavity surface emitting laser can be reduced by the structure and the carrier injection efficiency can be increased so as to realize improvement of the high speed characteristic of the device.

Description

technical field [0001] The invention relates to a long-wavelength vertical cavity surface-emitting laser, which has important applications in the field of optical fiber communication and belongs to the field of semiconductor lasers. Background technique [0002] Vertical cavity surface emitting laser has the advantages of circular output spot, small divergence angle, low threshold current, high transmission rate, high power conversion efficiency, low electrical power loss, high operating temperature, high reliability and low cost, and it is compatible with light The coupling efficiency is high, it is easy to make a two-bit array, and it can be detected in situ, which is very suitable for mass production. It is internationally recognized as one of the most promising low-cost laser light sources in the field of optical fiber communication. [0003] First of all, based on the development of material system, the difficulty of development and the consideration of device cost, the...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01S5/183H01S5/02
CPCH01S5/0207H01S5/18366
Inventor 刘丽杰王玥吴远大安俊明胡雄伟
Owner INST OF SEMICONDUCTORS - CHINESE ACAD OF SCI