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A thyristor circuit for electrostatic discharge protection of radio frequency port

An electrostatic discharge protection and thyristor technology, applied in the electrostatic field of ports, can solve the problems of high trigger voltage and slow turn-on speed, and achieve the effects of low trigger voltage, low static power consumption, and strong robustness

Active Publication Date: 2019-07-30
SOUTHEAST UNIV
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  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

Thyristor has the advantages of strong ESD protection ability and uniform conduction current, but also has disadvantages such as high trigger voltage and slow turn-on speed. Therefore, it is necessary to improve the thyristor in terms of structure, layout, etc., so as to meet the design requirements

Method used

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  • A thyristor circuit for electrostatic discharge protection of radio frequency port
  • A thyristor circuit for electrostatic discharge protection of radio frequency port
  • A thyristor circuit for electrostatic discharge protection of radio frequency port

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Embodiment Construction

[0025] The P-type substrate, N well, P well, N+ injection area, P+ injection area, Poly polysilicon and current limiting resistor in the present invention can all be realized by using existing standard CMOS integrated circuit manufacturing processes.

[0026] Such as figure 1 As shown, a thyristor circuit for electrostatic discharge (ESD) protection of radio frequency ports of the present invention consists of a pull-up thyristor 1, a pull-down thyristor 2, a first current-limiting resistor 3, and a second current-limiting resistor 4. , The third current limiting resistor 5 and the fourth current limiting resistor 6 are formed.

[0027] Such as figure 2 , The pull-up thyristor 1 includes a first P-type substrate layer 11, and a first N-well 12, a first P-well 13 and a second N-well 14 are respectively provided on the first P-type substrate layer 11. The first P-well 13 In the center, the first N-well 12 and the second N-well 14 are respectively symmetrically arranged on both side...

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Abstract

A silicon controlled rectifier circuit for electrostatic discharge protection of a radio frequency port comprises a pull-up silicon controlled rectifier, a pull-down silicon controlled rectifier, a first current-limiting resistor, a second current-limiting resistor, a third current-limiting resistor and a fourth current-limiting resistor. The characteristics of low trigger voltage of a gate-grounded N-type metal-oxide-semiconductor transistor (GGNMOS) and low parasitic capacitance of a silicon controlled rectifier (SCR) are combined, poly-silicon is embedded into the silicon controlled rectifier, so that the characteristics of low trigger voltage and low parasitic capacitance are achieved. Moreover, the silicon controlled rectifier employs an axial symmetric well structure, and the current-limiting resistors are additionally arranged and are used for improving robustness of an electrostatic discharge protection (ESD) circuit.

Description

Technical field [0001] The invention relates to an electrostatic discharge (ESD) protection device for radio frequency I / O ports, in particular to a silicon controlled circuit for radio frequency port electrostatic discharge protection. It adopts CMOS technology and has an ESD protection circuit for radio frequency integrated circuits. Large advantages, simple structure, is conducive to on-chip integration, while improving the reliability of the ESD protection circuit and static power consumption, while greatly reducing the trigger voltage, and has a smaller parasitic capacitance. Background technique [0002] Electrostatic discharge (ESD) poses a serious threat to integrated circuits. According to relevant statistics, the damage caused by ESD in the field of integrated circuits is as high as about 10 billion US dollars per year. About 58% of electronic device failures are caused by ESD and electrical stress. of. Nowadays, with the progress of chip manufacturing process, the pro...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01L27/02
CPCH01L27/0262H01L27/0288H01L27/0296
Inventor 李智群程国枭乐鹏飞李芹何小东何波涌
Owner SOUTHEAST UNIV
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