Cleaning method of ion implantation device

Abstract

The invention provides a cleaning method of an ion implantation device. The ion implantation device comprises an ion source, a leading-out electrode system and a scanning cavity, wherein the ion source is used for generating plasma and provided with a lamp filament, the leading-out electrode system is used for leading out a band-shaped ion beam, and the scanning cavity is used for conducting ion scanning on a substrate and provided with a substrate clamp. The cleaning method of the ion implantation device comprises the steps of preparation, cleaning, maintenance and finishing. The cleaning method of the ion implantation device is suitable for the cleaning stage before ion implantation, the cleaning stage in the interval of ion implantation and the cleaning stage after ion implantation. By the adoption of the cleaning method of the ion implantation device, the ion source, the leading-out electrode system and the substrate clamp are all effectively cleaned, and it is avoided that unstable accumulated objects which are not cleaned away peel off.

Description

technical field [0001] The invention relates to the technical field of ion implantation, in particular to a cleaning method for ion implantation equipment applied to glass substrate active matrix light-emitting diode panels. Background technique [0002] Existing ion implantation equipment uses direct current to extract ion beams, accelerates the ion beams, and then irradiates the ion beams to the substrate in the processing chamber. During the ion implantation process, the ion implants are consumed and accumulated inside the ion source to form deposits, which will lead to changes in the capacitance structure of the inner wall of the ion source chamber and the capacitance structure between the electrode plates, causing frequent abnormalities discharge, causing the ion source to extract the beam current unstable, so that the uniformity of ion implantation is reduced; and the deposits are also accumulated in the substrate holder, causing the substrate to be dirty when the subs...

AI Technical Summary

Problems solved by technology

During the ion implantation process, the ion implants are consumed and accumulated inside the ion source to form deposits, which will lead to changes in the capacitance structure of the inner wall of the ion source chamber and the capacitance structure between the electrode plates, causing frequent abnormalities discharge, causing the ion source to extract the beam current unstable, so that the uniformity of ion implantation is reduced; and the deposits are also accumulated in the substrate holder, causing the substrate to be dirty when the substrate holder is loaded. Therefore, it is necessary to The ion source and the substrate holder are cleaned

The cleaning method in the prior art is: in the ion implantation gap, hydrogen gas is introduced into the ion source, hydrogen plasma is generated inside the ion source, and the deposits inside the ion source are cleaned. However, in practical applications, this method cannot achieve Completely remove the deposit, the remaining deposit will still cause abnormal discharge of the ion implantation equipment, and there is no method for cleaning the substrate holder in the prior art

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