Edge protection device and method of silicon wafer

Abstract

The invention discloses an edge protection device and method of a silicon wafer. The edge protection device of the silicon wafer comprises an optical protection ring, a driving mechanism and a controller, wherein the driving mechanism is connected with the optical protection ring, the controller is connected with the driving mechanism, the optical protection ring is arranged behind a light source and in front of a mask of a lighting system, a round through hole is formed in the middle part of the optical protection ring, and an edge is opaque. By arranging the optical protection ring behind the light source and in front of the mask of the lighting system and arranging the controller and the driving mechanism, the optical protection ring can be driven to move so as to perform shading protection on the edge of the silicon wafer according to a position of an exposure field of the silicon wafer, the optical protection ring can be arranged according to the size and the position of the exposed silicon wafer so as to be adaptive to edge protection requirements of different silicon wafers, the edge protection device is high in applicability, low in cost, reliable in effect and simple in structure, and is convenient to use, an exposure effect cannot be affected, and the application demand of an approximate field-by-field exposure device is practically satisfied.

Description

technical field [0001] The invention relates to the technical field of photolithography machines, in particular to a silicon wafer edge protection device and method. Background technique [0002] Lithography equipment is mainly used in the manufacture of integrated circuits IC or other micro-devices. With a photolithographic apparatus, a mask pattern can be imaged on a photoresist-coated wafer, such as a semiconductor or an LCD panel. The photolithography device is exposed through the projection objective lens, and the designed mask pattern is transferred to the photoresist. [0003] Therefore, photoresist is an important material in the photolithography process. It is divided into two types: positive photoresist (positive photoresist) and negative photoresist (negative photoresist). The photoresist whose exposed part is dissolved by the developer is called positive photoresist. The photoresist whose non-exposed part is dissolved by the developer is called negative photore...

AI Technical Summary

Problems solved by technology

The mask 3' is installed on the mask table 4', and there is a variable slit 5' above the mask. The variable slit 5' can adjust the size of the mask exposure area, but the size of an exposure field is 10mm*10mm, When the diameter of the circular silicon wafer 6' is as figure 2 When the shown 100mm, it is obviously unfeasible to prevent the exposure of the edge of the silicon wafer by adjusting the mask exposure area. Placing a guard ring on the silicon wafer 6' will affect the normal exposure process, so it cannot actually meet the needs of practical applications

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