Eureka AIR delivers breakthrough ideas for toughest innovation challenges, trusted by R&D personnel around the world.

A kind of indolocarbazole-containing organic semiconductor material and its application in organic light-emitting devices

An organic semiconductor and organic technology, applied in the application field of organic electroluminescent devices, can solve the problems of limited material performance improvement and low yield

Active Publication Date: 2019-06-21
GUANMAT OPTOELECTRONICS MATERIALS INC
View PDF17 Cites 0 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0023] Document DE102016201672 discloses the use of 7-substituted indolocarbazole to obtain host materials, but the performance of the obtained materials is limited and the yield is low

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • A kind of indolocarbazole-containing organic semiconductor material and its application in organic light-emitting devices
  • A kind of indolocarbazole-containing organic semiconductor material and its application in organic light-emitting devices
  • A kind of indolocarbazole-containing organic semiconductor material and its application in organic light-emitting devices

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0113] Example 1: Synthesis and preparation of compound 7C host material:

[0114] Compound 7C was prepared according to the following chemical synthesis route, and a white powder material was obtained, PL=415nm. The molecular structure was verified by mass spectrometry as shown in Table 11.

[0115]

Embodiment 2

[0116] Example 2: Synthesis and preparation of compound 18C hole transport material:

[0117] Compound 18C was prepared according to the following chemical synthesis route, a white powder material was obtained, PL=420nm, and the molecular structure was verified by mass spectrometry as shown in Table 11.

[0118]

Embodiment 3

[0119] Example 3: Synthesis and preparation of compound X-6 electron transport material:

[0120] Compound X-6 was prepared according to the following chemical synthesis route, a white powder material was obtained, PL=440nm, and the molecular structure was verified by mass spectrometry as shown in Table 9.

[0121]

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

PropertyMeasurementUnit
thicknessaaaaaaaaaa
Login to View More

Abstract

An organic semiconductor material characterized by high heat resistance, high charge transport and good processability constructed from an indolocarbazole aromatic heterocycle. Applied to organic light-emitting diodes, it has the characteristics of high efficiency, low voltage and long working life.

Description

[0001] Technical field: [0002] The invention relates to an organic semiconductor compound and the application of the prepared organic electroluminescent device. A series of organic semiconductor compounds with asymmetric structure and organic semiconductor compounds with crosslinking groups can be obtained by using an indolocarbazole as a structural element and a well-developed organic donating or accepting unit, which can be applied to organic light-emitting OLED devices , improve the charge injection, solubility and processability of luminescent materials, which is beneficial to the large-scale production of OLED display devices. [0003] Background technique: [0004] Organic semiconductor materials are new types of optoelectronic materials, and their large-scale research originated in 1977 by Shirakawa Hideki, A. Heeger and A. McDiamid who jointly discovered doped polyacetylene with conductivity up to copper level. Subsequently, in 1987, C.Tang of Kodak Company invented ...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
Patent Type & Authority Patents(China)
IPC IPC(8): C07D487/06C07D519/00C07F7/10C07F9/6561C09K11/06H01L51/50H01L51/54
CPCC09K11/06C07D487/06C07D519/00C07F7/0812C07F9/6561C09K2211/1044C09K2211/1037C09K2211/1059C09K2211/1088C09K2211/1096C09K2211/1092C09K2211/1007C09K2211/1029C09K2211/1022C09K2211/1014C09K2211/1011H10K85/623H10K85/622H10K85/624H10K85/631H10K85/636H10K85/633H10K85/654H10K85/655H10K85/657H10K85/6574H10K85/6576H10K85/6572H10K50/11
Inventor 李晓常郝望龙殷正凯
Owner GUANMAT OPTOELECTRONICS MATERIALS INC
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Eureka Blog
Learn More
PatSnap group products

Browse by: Latest US Patents, China's latest patents, Technical Efficacy Thesaurus, Application Domain, Technology Topic, Popular Technical Reports.

© 2024 PatSnap. All rights reserved.Legal|Privacy policy|Modern Slavery Act Transparency Statement|Sitemap|About US| Contact US: help@patsnap.com