Processing device

Abstract

A processing device comprises a plurality of battery transport channels, a plurality of high heat generating light sources, and a plurality of low heating light sources. The battery transport channels are arranged adjacent to each other, wherein each battery transport channel comprises a transport device and the transport devices are configured to transport a plurality of semiconductor solar cells. The high heat source and the low heat source are arranged in a staggered manner along the transport direction of the transport device to the upper side of the battery transport channel for conducting heat treatment of the semiconductor solar cell. The light emitted by the high-heating light source and the low-emission light source contains visible light and infrared light, and the sum of the visible light accounts for 50 to 90% of the sum of the infrared light and the visible light. By arranging the high-heating light source and the low-emission light source in a staggered manner, it is possible to effectively reduce the temperature in the chamber of the processing apparatus while providing sufficient illuminance of the semiconductor solar cell, the difficulty of radiating the chamber of the processing apparatus can be drastically reduced, and the uniformity of the chamber temperature can be improved.

Description

technical field [0001] The present invention relates to a processing device for semiconductor elements, and in particular to a light-heating processing device for semiconductor solar cells. Background technique [0002] In traditional solar technology, boron-doped single wafers produced by Tchaikovsky (CZ) crystal growth method are mostly used as the matrix material for making solar cells. The reason is that the doping process of the boron-doped single crystal silicon material is relatively convenient and easy, and the distribution of resistivity of the manufactured single crystal silicon rod is relatively uniform. However, solar cells made of boron-doped single crystal silicon, especially boron-doped single crystal silicon with low resistivity (for example, in the range of 0.5Ω·cm to 1.5Ω·cm) as the matrix material, the battery The efficiency will decay under sunlight illumination or carrier injection, and this phenomenon is called light induced degradation (LID). [0003...

AI Technical Summary

Problems solved by technology

However, the way to reduce the oxygen content of the silicon wafer is to apply an external magnetic field during the crystal growth, which will increase the process cost and cause the price of the silicon wafer to become more expensive

Secondly, reducing the boron content will increase the resistance of the silicon wafer, worsen the electrical properties, and the uniformity of resistance will be poor

Replacing boron with other group III elements, such as gallium, will also increase the cost of silicon wafers

In addition, the price of n-type single crystal silicon wafers is higher than that of p-type single crystal silicon wafers, so replacing p-type single crystal silicon wafers with n-type single crystal silicon wafers will lead to an increase in cost

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