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Packaging structure of power module

A technology of packaging structure and power module, which is applied in the directions of electrical components, electric solid devices, circuits, etc., can solve the problems of high chip thickness and pressure uniformity, complex structure of press-fit power modules, chip damage, etc., and achieves improvement. Performance and reliability, improved heat dissipation, easy-to-achieve effects

Pending Publication Date: 2017-08-01
杨杰
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, the crimping type power module has a complex structure, high cost, high requirements on chip thickness and pressure uniformity, and requires a special design for the power chip, and the crimping stress can easily cause damage or even tearing of the chip

Method used

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  • Packaging structure of power module
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Embodiment Construction

[0025] The specific implementation of the present invention will be described in detail below by taking a power module package in which two IGBT power bare chips are connected in parallel as an example in conjunction with the accompanying drawings. refer to figure 1 , the present invention is a package structure of a power module, which is composed of a lower metal directly coated copper ceramic circuit board 1, IGBT bare chips 21 and 22, an upper metal directly coated copper ceramic circuit board 3, an insulating shell 4 and an upper cover plate 5, The thermal conductive glue 6 is filled between the upper layer circuit board 3 and the upper cover plate 4 to reduce thermal resistance.

[0026] refer to figure 2 , the lower direct copper-clad ceramic circuit board 1 includes a ceramic substrate 11, a lower surface metal layer 12, and an upper surface metal layer 13, wherein the upper surface metal layer 13 is a circuit layer, and the lower surface metal layer 12 is a substrat...

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PUM

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Abstract

The invention discloses a packaging structure of a power module. The packaging structure comprises a lower layer metal direct bonded ceramic circuit board, a packaged power device chip, an upper layer metal direct bonded ceramic circuit board, an upper cover plate and an insulating shell, wherein an electrode on the lower surface of the packaged power device chip is fixed on the lower layer ceramic circuit board through solder; the upper layer ceramic circuit board is inversely arranged on the packaged power device chip, and is in contact with an electrode on the upper surface of the packaged power device chip through a convex contact on the metal layer thereof; and the upper cover plate applies downward pressure to the upper layer ceramic circuit board through a compression spring to ensure tight contact between the convex contact and the electrode. By virtue of the packaging structure of the power module disclosed by the invention, lead bonding in the conventional power module packaging can be avoided, so that current carrying capacity is improved; and in addition, the packaging structure is simple and compact in structure, easy to realize, high in power device compatibility, and capable of improving heat dissipation of the power module and enhancing reliability of the power module.

Description

technical field [0001] The invention belongs to the technical field of power electronics, and in particular relates to a package structure of a power module. Background technique [0002] The package of the module is the most basic component of the power module, and it is very important to the performance, volume and reliability of the power module. At present, the interconnection of power devices in power modules mainly includes wire bonding and crimping. The wire bonding method is to carry out various wire bonding with gold wire or aluminum wire on each electrode of the bare chip of the power device, and then pull the wire to the inner leg of the module tripod to continue the wire bonding to complete the circuit. Wire bonding technology is currently the main connection technology used in power module packaging. For high-power devices, aluminum wire bonding is mostly used, which has a simple process and low cost. However, wire bonding has many problems such as small bondi...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L23/31H01L23/373H01L23/485
CPCH01L23/3121H01L23/3735H01L23/485
Inventor 杨杰
Owner 杨杰
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