Method for batch preparation of graphene quantum dots

A graphene quantum dot, batch technology, applied in graphene, single-layer graphene, chemical instruments and methods, etc., can solve the problems of graphene quantum dot activity damage, uncontrollable quantum dot shape and size, and expensive preparation cost. , to achieve the effect of less demand for raw materials and equipment types, good industrial application prospects, and simple technical processes

Active Publication Date: 2017-08-04
HEFEI UNIV OF TECH
View PDF4 Cites 15 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

The yield of these methods is low, the thickness of the obtained quantum dots is relatively thick, and the advantages of single-layer or few-layer graphene cannot be reflected, the shape and size of the quantum dots are uncontrollable, and the edges are not smooth. Very long, it takes dozens of hours or even longer, and the efficiency is very low
Moreover, a large part of the graphene quantum dots prepared by the existing method is in an oxidized state, which greatly damages the activity of the graphene quantum dots.
The existing shortcomings of these processes have seriously delayed the practical application of graphene quantum dots.

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Method for batch preparation of graphene quantum dots
  • Method for batch preparation of graphene quantum dots
  • Method for batch preparation of graphene quantum dots

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0030] The present embodiment prepares graphene quantum dots as follows:

[0031] (1), liquid nitrogen impregnation ultra-low temperature pretreatment

[0032] Weigh 100mg of high-purity graphite powder into a centrifuge tube with a volume of 50mL, and inject 40mL of liquid nitrogen into the centrifuge tube. The graphite powder is completely immersed in liquid nitrogen; place the centrifuge tube open in a liquid Soak in the nitrogen insulation barrel for 10 minutes;

[0033] (2), ultrasonic chemical peeling

[0034] Take out the centrifuge tube, and immediately disperse the graphite powder in 100 mL of a mixed solvent composed of water and isopropanol at a volume ratio of 1:1 after the liquid nitrogen is completely vaporized, and ultrasonically treat it at 135W for 10 minutes; then the product is heated at 2000 Centrifuge for 30 minutes at rpm, and take the supernatant to obtain graphene quantum dots.

[0035] Such as figure 1 As shown, the graphene quantum dots prepared i...

Embodiment 2

[0037] The present embodiment prepares graphene quantum dots as follows:

[0038] (1), liquid nitrogen impregnation ultra-low temperature pretreatment

[0039] Weigh 100mg of high-purity graphite powder into a centrifuge tube with a volume of 50mL, and inject 40mL of liquid nitrogen into the centrifuge tube. The graphite powder is completely immersed in liquid nitrogen; place the centrifuge tube open in a liquid Soak in the nitrogen insulation barrel for 10 minutes;

[0040] (2), ultrasonic chemical peeling

[0041] Take out the centrifuge tube, and immediately disperse the graphite powder in 100mL of a mixed solvent composed of water and isopropanol in a volume ratio of 3:2 after the liquid nitrogen is completely vaporized, and ultrasonically treat it for 60 minutes at 135W; Centrifuge for 30 minutes at rpm, and take the supernatant to obtain graphene quantum dots.

[0042] Such as figure 2 As shown, the graphene quantum dots prepared in this embodiment are evenly distri...

Embodiment 3

[0044] The present embodiment prepares graphene quantum dots as follows:

[0045] (1), liquid nitrogen impregnation ultra-low temperature pretreatment

[0046] Weigh 300mg of high-purity graphite powder into a centrifuge tube with a volume of 50mL, and inject 40mL of liquid nitrogen into the centrifuge tube. The graphite powder is completely immersed in liquid nitrogen; place the centrifuge tube open in a liquid Soak in a nitrogen insulation barrel for 60 minutes;

[0047] (2), ultrasonic chemical peeling

[0048] Take out the centrifuge tube, and immediately disperse the graphite powder in 300mL of a mixed solvent composed of water and isopropanol at a volume ratio of 2:1 after the liquid nitrogen is completely vaporized, and ultrasonically treat it for 60 minutes at an intensity of 135W; Centrifuge for 30 minutes at rpm, and take the supernatant to obtain graphene quantum dots.

[0049] Such as image 3 As shown, the graphene quantum dots prepared in this embodiment are ...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to view more

PUM

PropertyMeasurementUnit
thicknessaaaaaaaaaa
volumeaaaaaaaaaa
Login to view more

Abstract

The invention discloses a method for batch preparation of graphene quantum dots. The method is characterized by comprising the following steps: using graphite powder as a raw material; quickly obtaining large-batch unoxidized graphene quantum dots by liquid nitrogen impregnation ultralow temperature pretreatment and ultrasonic chemical stripping. According to the method disclosed by the invention, a liquid nitrogen impregnation ultralow temperature pretreatment technology is introduced and is combined with conventional ultrasonic processing, so that large-batch preparation of the graphene quantum dots is realized; according to the method, the condition that the graphene quantum dots are oxidized can be effectively avoided, and the activities such as conductivity of the graphene quantum dots is ensured to the maximum extent; in addition, by using the method, large-batch preparation of high-concentration graphene quantum dots can be realized; the method has the advantages of simple process, convenience in operation and low preparation cost.

Description

technical field [0001] The invention relates to the field of nanomaterial preparation, in particular to a method for preparing graphene quantum dots. Background technique [0002] Graphene is a two-dimensional layer of carbon atoms that was successfully peeled off from graphite by physicists Andre Geim and Konstantin Novoselov of the University of Manchester in 2004. Material. As the newest member of the graphene family, graphene quantum dots (GQDs) not only have the excellent properties of graphene, but also exhibit a series of new characteristics due to the quantum confinement effect and boundary effect, thus attracting the attention of chemistry, physics, materials And scientists in various fields such as biology pay close attention to. As a special zero-dimensional carbon material, graphene quantum dots have important potential applications in the fields of biology, medicine, materials, and new semiconductor devices. However, how to obtain large quantities of graphene...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to view more

Application Information

Patent Timeline
no application Login to view more
Patent Type & Authority Applications(China)
IPC IPC(8): C01B32/19
CPCC01B2204/02C01B2204/04C01B2204/22C01P2004/04
Inventor 王岩张剑芳吴玉程秦永强崔接武张勇舒霞
Owner HEFEI UNIV OF TECH
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Try Eureka
PatSnap group products

Browse by: Latest US Patents, China's latest patents, Technical Efficacy Thesaurus, Application Domain, Technology Topic.

© 2024 PatSnap. All rights reserved.Legal|Privacy policy|Modern Slavery Act Transparency Statement|Sitemap