Copper Foil With Attached Carrier, Copper-Clad Laminate Using Same, Printed Circuit Board, Electronic Device, And Method For Manufacturing Printed Circuit Board
A technology with carrier copper foil and carrier, applied in electronic equipment, printed circuits, printed circuits, etc., can solve problems such as poor insulation of circuit patterns and residual copper particles
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Embodiment 1
[0250] A polyimide film (Upilex-S film manufactured by Ube Industries, Ltd.; thickness: 35 μm) was installed in a vacuum apparatus, and plasma treatment was performed using oxygen after vacuum exhaust.
[0251] Next, a Cr layer of 10 nm was formed on one surface of the plasma-treated film by Cr sputtering. Afterwards, the Cr sputtered layer is processed in an oxygen atmosphere chamber to form chromium oxide on the surface to form an intermediate layer.
[0252] Next, Cu sputtering was performed on the surface of the Cr intermediate layer to form a Cu sputtering layer with a thickness of 5 μm. The sputtering conditions are set in the Ar gas using the Cu target, the discharge voltage is 500V, the discharge current is 15A, and the vacuum degree is 5×10 -2 Pa.
[0253] Next, on the surface of the 5 μm Cu sputtered layer, the following roughening treatment 1, roughening treatment 2, heat resistance treatment, chromate treatment, and silane coupling treatment were sequentially per...
Embodiment 2
[0298] After forming the ultra-thin copper layer of 5 μm Cu sputtering on the polyimide film carrier with the same steps, methods and conditions as in Example 1, the heat-resistant treatment of Example 1, chromate treatment, and Silane coupling treatment.
Embodiment 3
[0300] After forming a Cu sputtering layer of 1 μm on the polyimide carrier with the same steps, methods, and conditions as in Example 1, then, on a roll-to-roll continuous plating line, form a sputtering layer on the Cu sputtering layer by electroplating. The Cu plated layer of 2 μm was electroplated under the following conditions to form an ultra-thin copper layer with a total copper thickness of 3 μm, and to manufacture a copper foil with a carrier.
[0301] ·Electroplating Cu layer
[0302] Copper concentration: 30~120g / L
[0303] h 2 SO 4 Concentration: 20~120g / L
[0304] Cl concentration: 30~80mg / L
[0305] Concentration of dithiobis(3-sulfopropyl) disodium: 10~50mg / L
[0306] Polymers containing dialkylamine groups (weight average molecular weight 8500): 10~50mg / L
[0307] Electrolyte temperature: 20~80℃
[0308] Current density: 10~100A / dm 2
[0309] After forming the ultra-thin copper layer, the same roughening treatment 1, roughening treatment 2, heat-resist...
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