Unlock instant, AI-driven research and patent intelligence for your innovation.

Wafer-level packaging method and packaging structure of image sensor

An image sensor and wafer-level packaging technology, which is applied in the manufacturing of electric solid-state devices, semiconductor devices, and semiconductor/solid-state devices. , the effect of avoiding pollution and chip damage

Inactive Publication Date: 2017-08-15
SHANGHAI INST OF MICROSYSTEM & INFORMATION TECH CHINESE ACAD OF SCI
View PDF7 Cites 6 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0005] In view of the shortcomings of the prior art described above, the object of the present invention is to provide a wafer-level packaging method and packaging structure for an image sensor, which is used to solve the problems of low packaging density, low Easy to cause pollution, low reliability and easy to cause warping problems

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Wafer-level packaging method and packaging structure of image sensor
  • Wafer-level packaging method and packaging structure of image sensor
  • Wafer-level packaging method and packaging structure of image sensor

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0070] Such as image 3 As shown, the present invention provides a wafer-level packaging method for an image sensor, and the wafer-level packaging method for an image sensor at least includes the following steps:

[0071] S1: Provide an image sensor chip, the image sensor chip includes an image sensing unit and a pad electrode connected to the image sensing unit and located on the front surface of the image sensor chip, and a first pad electrode is formed on the pad electrode a solder bump;

[0072] S2: providing a substrate, forming grooves on the back surface of the substrate;

[0073] S3: forming an interconnection structure on the substrate, the interconnection structure extending from the bottom of the groove to the back side of the substrate through the sidewall of the groove;

[0074] S4: flip-chip welding the image sensor chip on the interconnection structure at the bottom of the groove;

[0075] S5: forming a dielectric layer on the back of the image sensor chip an...

Embodiment 2

[0111] read on Figure 9 , the present invention also provides an image sensor wafer-level packaging structure, the image sensor wafer-level packaging structure is packaged by the packaging method in Embodiment 1, and the image sensor wafer-level packaging structure includes: a substrate 4, A groove 41 is formed on the back of the substrate 4; an interconnection structure 5, the interconnection structure 5 extends from the bottom of the groove 41 to the back of the substrate 4 through the sidewall of the groove 41; the image sensor chip 3 , the image sensor chip 3 includes an image sensing unit 31 and a pad electrode 32 connected to the image sensing unit 31 and located on the front side of the image sensor chip 3; a first solder bump 33, the first The solder bump 33 is located on the surface of the pad electrode 32; the image sensor chip 3 is flip-chip soldered on the interconnect structure 5 at the bottom of the groove 41 via the first solder bump 33; a dielectric layer 6. ...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

No PUM Login to View More

Abstract

The invention provides a wafer-level packaging method and packaging structure of an image sensor. The method comprises: an image sensor chip including an image sensing unit and a pad electrode is provided and a first solder bump is formed on the pad electrode; a substrate is provided, wherein a groove is formed in the back of the substrate; an interconnection structure is formed at the substrate; the image sensor chip is welded to the interconnection structure arranged at the bottom of the groove in an inverted manner; a dielectric layer is formed at the back surface of the image sensor chip and the back surface of the substrate; and a second solder bump is formed. With two-times utilization of the inverted welding technology, the thickness of the overall packaging structure is reduced; because of the dielectric layer structure at the back surface, the interconnection structure can be protected and the image sensing unit can be sealed into a sealed cavity, so that pollution as well as moisture entrance can be avoided; reliability is improved; and a warping problem caused by heterogeneous bonding of wafer-level packaging can be solved.

Description

technical field [0001] The invention relates to the technical field of image sensor packaging and manufacturing, in particular to a wafer-level packaging method and packaging structure for an image sensor. Background technique [0002] With the development of information technology, image sensors are widely used in electronic products in daily life. At the same time, the demand for intelligence in industrial production and inspection makes image sensors more widely used. [0003] The existing wafer-level packaging structure of the image sensor in the T-type connection mode is as follows: figure 1 As shown, a plurality of image sensor chips are formed on the sensor wafer 101 through a preset process, and the image sensor chip includes a sensing unit 102 and a pad electrode 103 leading out the sensing unit 102; the sensor wafer 101 and A transparent substrate 104 is bonded, and the adhesive material is resin 105; the pad electrode 103 is exposed by dry etching on the back of ...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
Patent Type & Authority Applications(China)
IPC IPC(8): H01L21/56H01L23/31
CPCH01L21/56H01L23/3114H01L23/3128H01L2224/16225H01L2224/48091H01L2924/00014
Inventor 梁得峰徐高卫
Owner SHANGHAI INST OF MICROSYSTEM & INFORMATION TECH CHINESE ACAD OF SCI