Bismuth telluride nanosheet film of spiral structure and preparing method of bismuth telluride nanosheet film

A helical structure, bismuth telluride technology, applied in ion implantation plating, metal material coating process, coating and other directions, can solve the problems of complex bismuth telluride nanostructure process, time-consuming, high cost, easy operation and high cost. The effect of promotion, less environmental pollution, and broad research value

Inactive Publication Date: 2017-08-18
XINJIANG UNIVERSITY
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0006] According to the literature research and the above literature reports, the process of preparing bismuth telluride nanostructures is complex and requires post-annealing or plasma sintering and other treatments, which is time-consuming and costly.

Method used

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  • Bismuth telluride nanosheet film of spiral structure and preparing method of bismuth telluride nanosheet film
  • Bismuth telluride nanosheet film of spiral structure and preparing method of bismuth telluride nanosheet film
  • Bismuth telluride nanosheet film of spiral structure and preparing method of bismuth telluride nanosheet film

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Experimental program
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Effect test

Embodiment 1

[0017] Before the experiment, put the fluorophlogopite in absolute ethanol for ultrasonic cleaning, then put it in a plasma cleaner and blow it with nitrogen to clean it and dry it. In the crucible, add 2.5mmol of Bi 2 Te 3 High-purity powder, placed in the heating tank of the evaporation source of the instrument. Fix the cleaned fluorphlogopite on the sample stage. Place the sample stage on the area above the evaporation source where the sample stage can be fixed, and adjust the distance between the substrate sample stage and the evaporation source to 10cm. Turn on the compound molecular pump unit to evacuate to 9*10 -5 Pa, the substrate was heated to 380 °C. After the substrate temperature is stable, heat the evaporation source to 360°C, and wait for the instrument to be vacuumed to 5*10 -5 Pa, open the baffle under the substrate and start coating. React at this temperature for 10 minutes, close the evaporation source and substrate baffle, adjust the evaporation source...

Embodiment 2

[0019] Before the experiment, put the fluorophlogopite in absolute ethanol for ultrasonic cleaning, then put it in a plasma cleaner and blow it with nitrogen to clean it and dry it. In the crucible, add 2.5mmol of Bi 2 Te 3 High-purity powder, placed in the heating tank of the evaporation source of the instrument. Fix the cleaned fluorphlogopite on the sample stage. Place the sample stage on the area above the evaporation source where the sample stage can be fixed, and adjust the distance between the substrate sample stage and the evaporation source to 10cm. Turn on the compound molecular pump unit to evacuate to 9*10 -5 Pa, the substrate was heated to 380 °C. After the substrate temperature is stable, heat the evaporation source to 360°C, and wait for the instrument to be vacuumed to 5*10 -5 Pa, open the baffle under the substrate and start coating. React at this temperature for 30 minutes, close the evaporation source and substrate baffle, adjust the evaporation source...

Embodiment 3

[0021] Before the experiment, put the fluorophlogopite in absolute ethanol for ultrasonic cleaning, then put it in a plasma cleaner and blow it with nitrogen to clean it and dry it. In the crucible, add 2.5mmol of Bi 2 Te 3 High-purity powder, placed in the heating tank of the evaporation source of the instrument. Fix the cleaned fluorphlogopite on the sample stage. Place the sample stage on the area above the evaporation source where the sample stage can be fixed, and adjust the distance between the substrate sample stage and the evaporation source to 10cm. Turn on the compound molecular pump unit to evacuate to 9*10 -5 Pa, the substrate was heated to 380 °C. After the substrate temperature is stable, heat the evaporation source to 340°C, and wait for the instrument to be vacuumed to 5*10 -5 Pa, open the baffle under the substrate and start coating. React at this temperature for 10 minutes, close the evaporation source and substrate baffle, adjust the evaporation source...

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Abstract

The invention discloses a bismuth telluride nanosheet film of a spiral structure and a preparing method of the bismuth telluride nanosheet film. The bismuth telluride nanosheet film is achieved through the following technology process that a certain amount of high-purity Bi2Te3 powder is added in a high vacuum heat evaporation coating machine crucible and placed in a heating area; a substrate sample table is adjusted to get away from an evaporation source by 10 cm, and cleaned fluorine crystal mica is placed on the substrate sample table; a composite molecular pump unit is started, vacuum pumping is conducted to 5*10<-5>Pa, a substrate is heated to 380 DEG C-400 DEG C, the evaporation source is heated, the temperature reaches 340 DEG C-360 DEG C through heating, and coating is started; and the reaction is conducted for 5-120 min at the temperature, a control panel is used for adjusting the temperature of the evaporation source and the substrate to 0 DEG C, and after an instrument is naturally cooled, a product is obtained. The bismuth telluride nanosheet film and the preparing method of the bismuth telluride nanosheet film have the beneficial effects that by means of the method, the bismuth telluride nanosheet film of the spiral structure can be directly prepared; the product appearance is in spiral growth, and steps are clear and visible; and other products are avoided, and pollution to the environment is weak.

Description

technical field [0001] The present invention relates to a bismuth telluride nanosheet thin film with a helical structure and a preparation method thereof, which is a method for directly coating a bismuth telluride nanosheet thin film with a helical structure on a fluorocrystalline mica substrate through a high-vacuum thermal evaporation device. The method belongs to the technical field of semiconductor nanometer materials. Background technique [0002] Bismuth telluride, as a group V-VI element compound, has a band gap of 0.145 eV at room temperature. Bismuth telluride has a crystal structure of a trigonal crystal system, and layers along the c-axis direction are arranged periodically in the order of Te-Bi-Te-Bi-Te. Bismuth telluride is a semiconductor material, and its characteristic is that it can realize the mutual conversion of thermal energy and electrical energy. It is a room temperature thermoelectric material with many research properties at home and abroad. Bismut...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): C23C14/06C23C14/24
CPCC23C14/0623C23C14/24
Inventor 简基康王颖郭燕红
Owner XINJIANG UNIVERSITY
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