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High-precision mask based on quantum dots

A kind of quantum dot film and quantum dot technology, which is applied to the original parts for photomechanical processing, photoplate process of pattern surface, optics, etc., can solve the problems of photoresist influence, bottom exposure influence, scattering, etc., and achieve accurate Exposure, reduction of photoresist effects, reduction of light scattering effects

Inactive Publication Date: 2017-08-18
BEIJING INSTITUTE OF TECHNOLOGYGY
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, the phase shift grating only produces a destructive effect on the transmitted light beam. Since the mask has a certain thickness, when the light passes through this thickness, it will produce a certain amount of scattering, which will also affect the exposure of the bottom layer.
In addition, because the phase shift layer itself has a certain transmittance, the phase shift layer will affect the photoresist in the non-exposed area of ​​the bottom layer.

Method used

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  • High-precision mask based on quantum dots
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Examples

Experimental program
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Effect test

Embodiment 1

[0028] like figure 1 As shown, the incident light is blue light with a wavelength of 446-464nm, and two kinds of quantum dot thin films are deposited and formed on the quartz mask substrate 4 . For the light-transmitting region 2, considering the photosensitivity of the photoresist and the requirement of high resolution, the quantum dots in the light-transmitting region 2 are limited to a wavelength of 365 nm. For pattern area 3, considering that the photoresist is not sensitive to yellow light, its wavelength is limited to yellow light of 578-592nm. Although the pattern area 3 still has light incident on the photoresist, the photoresist does not react with the yellow light and can be regarded as opaque.

Embodiment 2

[0030] Will in embodiment 1 figure 1 The dustproof film 1 is replaced by a quantum dot film 4, such as figure 2 As shown, the incident light is blue light, the light passing through the pattern area 3 is absorbed, and the light-transmitting area 2 is converted into a wavelength of 365nm by the quantum dot film and irradiated on the photoresist. Because the quantum dot film layer is very thin (about 100nm), it can greatly reduce the light scattering effect and achieve high-precision exposure.

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Abstract

The invention discloses a mask based on quantum dots. The mask comprises a substrate, a graph layer and a dustproof film, wherein a graph area of the graph layer is a quantum dot film or light-proof material film; a light-permeable area of the graph layer is hollow or a quantum dot film with the wavelength different from that of the graph area; the dustproof film is a simple dustproof film or a dustproof film formed y quantum dots. The photomask is mainly produced with the quantum dot technology, light ray scattering caused by the thickness of the mask is reduced while stray light rays are eliminated, the photoresist influence in a non-exposure area is reduced, and more precise exposure is realized; the mask is mainly applied to the TFT LCD photolithography technique, more precise wiring can be realized, equipment can be used maximally while the equipment is not modified, high-precision exposure is realized, and more precise TFT LCD panels can be produced; in the same technological process, the same exposure precision can be realized while ten-million-level equipment transformation investment is not increased, and the product marginal benefit is substantially increased.

Description

technical field [0001] The invention belongs to the technical field of photolithography, and in particular relates to a high-precision mask based on quantum dots. Background technique [0002] In the array manufacturing process of TFT LCD, the exposure process is realized by irradiating the mask plate with an ultraviolet wide-spectrum light source. Although the mask plate has the characteristics of simple process, easy manufacture and mass production, with the demand for higher and higher exposure precision, the stray light generated by the mask plate at the micron level begins to have a certain impact on the exposure process. [0003] The phase-shift grating mask (PSM) technology is used in the industry to eliminate stray light, and certain effects have been achieved. The phase-shift grating's destructive effect is used to eliminate stray light, making the light reaching the substrate photoresist more uniform. [0004] The phase shift grating is aimed at a single wavelengt...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): G03F1/26
CPCG03F1/26
Inventor 喻志农郭建蒋玉蓉薛唯
Owner BEIJING INSTITUTE OF TECHNOLOGYGY