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A Lateral Insulated Gate Bipolar Transistor

A bipolar transistor, insulated gate technology, applied in transistors, diodes, semiconductor devices, etc., can solve problems such as weakening the conductance modulation effect of the drift region, unfavorable device practical application, increasing forward voltage drop, etc., and achieve high breakdown. Effects of voltage, low turn-off losses, and fast turn-off speed

Inactive Publication Date: 2019-08-02
UNIV OF ELECTRONICS SCI & TECH OF CHINA
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, when the structure is in forward conduction, electrons reach the collector through the N+ emitter region 5, the surface channel of the P-type body region 4, the low-doped N-type drift region 3, and the collector N+ region 8, forming a parasitic MOS structure. The generation of an electronic current path will cause the conduction curve to show a negative resistance phenomenon, weaken the conductance modulation effect in the drift region, and increase the forward conduction voltage drop, which is not conducive to the practical application of the device

Method used

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  • A Lateral Insulated Gate Bipolar Transistor
  • A Lateral Insulated Gate Bipolar Transistor
  • A Lateral Insulated Gate Bipolar Transistor

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0030] like image 3 As shown, this is a schematic structural diagram of this example, including a substrate 1, an insulating layer 2 and an N-type low-doping drift region 3 that are sequentially stacked from bottom to top; the upper layer of the N-type low-doping drift region 3 has A P-type body region 4 and an N-type buffer region 7, the upper layer of the P-type body region 4 has a P+ contact region 6 and an N+ emitter region 5 arranged in parallel to each other, wherein the N+ emitter region 5 is located on the side close to the N-type buffer region 7 , the N-type buffer region 7 has a P-type collector region 8; the P+ contact region 6 and part of the N+ emitter region 5 have an emitter metal electrode 130 on the upper surface, and the P-type body region 4 has a first surface on the upper surface. A gate structure, the first gate structure is composed of a first gate dielectric layer 110 and a first polysilicon gate electrode 120 located on the upper surface of the first g...

Embodiment 2

[0037] like Figure 4 As shown, the difference between this embodiment and Embodiment 1 is that in this embodiment, compared with Embodiment 1, the P-type collector region 8 and the collector metal electrode 131 and the highly doped N+ region 9, the highly doped P+ region 10 and The positions of the third metal electrodes 134 are exchanged. Therefore, in this example, the P-type collector region 8 is closer to the P-type body region 4 than the N+ region 9 and the P+ region 10; The thickness of the equivalent N-type buffer layer 7 between 3 further reduces the conduction loss of the device.

Embodiment 3

[0039] like Figure 5As shown, in this embodiment, compared with Embodiment 2, a Zener diode is directly formed in the polysilicon layer above the dielectric layer 112. The Zener diode and the polysilicon diode share the highly doped N+ region 123, and the highly doped N+ region 123 is The anode of the Zener diode, the polysilicon N+ region 126 is the cathode of the Zener diode, and the polysilicon P+ region 125 is the highly doped region between the anode and cathode of the Zener diode; at the same time, the type of Zener diode in the polysilicon layer above the dielectric layer 112 , position and shape can be adjusted as needed, for example, N+ region 126 and P+ region 125 can be arranged in the device width direction perpendicular to the horizontal direction; compared with Embodiment 2, the integration degree is improved and the chip area is reduced.

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Abstract

The invention belongs to the semiconductor power device technology field, and particularly relates to a transverse insulated gate bipolar transistor. In the invention, a poly-diode is formed on a surface of a drift region of a member and a PMOS and a Zener diode are formed in proximity to a collector; in a blocking state, under an action of charges and a field plate which are supplied through depleting the drift area in a reverse bias state of a polycrystalline diode on the surface of the member, voltage resistance higher than that that of a traditional structure is obtained while a doping concentration of the drift region of the member; in a process of switching off the member, a voltage change of a collector and a self-bias effect formed by a surface polycrystalline diode and a zener diode make PMOS near the collector automatically start and conduct and accelerate carrier extraction in an LIGBT so as to improve switching off speed of the member; in a conductive state, the PMOS around the collector is in a switching off state and an access of electronic current is cut off. As a result, the transverse insulated gate bipolar transistor has higher breakthrough voltage, and, in the process of switching off, has faster switching off speed and switching off loss.

Description

technical field [0001] The invention belongs to the technical field of semiconductor power devices, in particular to a lateral insulated gate bipolar transistor. Background technique [0002] Insulated Gate Bipolar Transistor (IGBT) is a new type of power electronic device combining MOS field effect and bipolar transistor. With the advantages of large current and small loss, it has become the mainstream power switching device in the field of medium and high power power electronics, and is widely used in various fields of the national economy such as communications, energy, transportation, industry, medicine, household appliances and aerospace. Internationally well-known semiconductor companies, such as ABB, Infineon (IR), ST, Renesas, Mitsubishi, FuJi, etc., have successively invested in the research and development and manufacture of IGBTs. In recent years, as a hot field of power electronics, IGBT has been highly valued by developed countries and regions such as the Unite...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01L29/739H01L27/06
CPCH01L27/0629H01L29/7394
Inventor 张金平陈钱刘竞秀李泽宏任敏张波
Owner UNIV OF ELECTRONICS SCI & TECH OF CHINA
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