Drive controller applied to high speed motor

Abstract

The invention discloses a drive controller applied to a high speed motor. The drive controller includes a switch power source, a main control circuit, a current sampling circuit, a capacitor and six insulated gate bipolar transistors. The six insulated gate bipolar transistors are made of silicon carbide. By adopting the above technical scheme, the switching frequency of a power module is between 20KHz and 50KHz and the rotation speed of the motor can reach 30000-50000 turn / minute or higher. The insulated gate bipolar transistors made of silicon carbide are low in conduction resistance, high in environment temperature endurance and convenient for vehicle use. By using the insulated gate bipolar transistors, the size and power consumption of a heat dissipation are reduced, and the efficiency and power density of the drive controller of the high speed motor are increased.

Description

technical field [0001] The invention relates to the technical field of motor control, in particular to a drive controller applied to high-speed motors. Background technique [0002] The drive controller in the high-speed motor, the traditional way is to use IGBT (Insulated Gate Bipolar Transistor), insulated gate bipolar transistor, which is a composite full control composed of BJT (Bipolar Transistor) and MOS (Insulated Gate Field Effect Transistor) Type voltage-driven power semiconductor devices, which have both the advantages of high input impedance of MOSFET (insulated gate field effect transistor) and low conduction voltage drop of BJT (bipolar transistor), but when using high frequency switching, due to Switching losses increase, heat generation increases, heat dissipation needs to be increased, high-speed motor drive controllers work on electric vehicles, and the conditions of use are harsh. (30,000 rpm to 50,000 rpm), which requires the switching frequency of the po...

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Problems solved by technology

[0002] The drive controller in the high-speed motor, the traditional way is to use IGBT (Insulated Gate Bipolar Transistor), insulated gate bipolar transistor, which is a composite full control composed of BJT (Bipolar Transistor) and MOS (Insulated Gate Field Effect Transistor) Type voltage-driven power semiconductor devices, which have both the advantages of high input impedance of MOSFET (insulated gate field effect transistor) and low conduction voltage drop of BJT (bipolar transistor), but when using high frequency switching, due to Switching losses increase, heat generation increases, heat dissipation needs to be increased, high-speed motor drive controllers work on electric vehicles, and the conditions of use are harsh. (30000rpm~50000rpm), which requires the switching frequency of the power module to work at 20KHz~50KHz, the conventional IGBT module can no longer meet the application requirements

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