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A universal non-volatile write-once-read-many memory and its preparation method

A non-volatile, multiple-read technology, applied in the direction of electrical components, etc., can solve the problems of restricting extensive development, complex preparation process, resistive storage performance, etc., and achieve large storage window value, simple preparation steps, and stability high effect

Active Publication Date: 2019-10-25
NANJING TECH UNIV
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, due to the shortcomings of the current WORM resistive memory, such as complex preparation process and high production cost, its extensive development in industrial applications is limited.
[0005] Lai, Liu et al. modified the insulating polymer in the storage medium material by doping metal or conductive polymer. In the process of applying voltage, the modified storage medium layer can capture and absorb electrons. release, so as to realize the resistive storage performance, but the preparation process of this method is complex
The Chinese patent application number is 201510271467.4, and the title of the invention is "Resistive variable memory with low formation voltage and its preparation method". Although the memory in this patent has the function of writing resistance with low power consumption, the preparation process is complicated and the preparation cost is high.

Method used

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  • A universal non-volatile write-once-read-many memory and its preparation method
  • A universal non-volatile write-once-read-many memory and its preparation method
  • A universal non-volatile write-once-read-many memory and its preparation method

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Embodiment 1

[0035] A method for preparing a universal non-volatile write-once-read-many memory, comprising the following steps:

[0036] (1) Substrate treatment: Sonicate the silicon wafer substrate with ethanol, isopropanol, and ethanol for 10 minutes, blow dry with nitrogen, and then treat it with an oxygen plasma cleaner at a power of 50W for 3 minutes.

[0037] (2) Preparation of the bottom electrode: Spin-coat the graphene oxide solution on the silicon wafer substrate first to obtain a large-area graphene oxide film, and then reduce it at a high temperature of 1000°C for 2 hours in an argon / hydrogen mixed atmosphere to obtain Reduced graphene oxide film.

[0038] (3) Preparation of the storage medium layer: the insulating polymer PMMA was dissolved in toluene solution, and then spin-coated on the bottom electrode, the rotation speed of the spin coater was 1000rpm, and dried, and the thickness of the storage medium layer was 70nm;

[0039] (4) Preparation of the top electrode: by the...

Embodiment 2

[0042] A method for preparing a universal non-volatile write-once-read-many memory, comprising the following steps:

[0043] (1) Substrate treatment: Sonicate the silicon wafer substrate with ethanol, isopropanol, and ethanol for 15 minutes, blow dry with nitrogen, and then treat it with an oxygen plasma cleaner at a power of 30W for 5 minutes.

[0044] (2) Preparation of the bottom electrode: Spin-coat a graphene oxide solution on a silicon wafer substrate first to obtain a large-area graphene oxide film, and then reduce it at a high temperature of 1100°C for 1.5 hours in an argon / hydrogen mixed atmosphere to obtain Reduced graphene oxide film.

[0045] (3) Preparation of the storage medium layer: Dissolve the insulating polymer PS in the dichlorobenzene solution, and then spin-coat it on the bottom electrode. The rotation speed of the spin coater is 800rpm, and dry it. The thickness of the storage medium layer is 75nm;

[0046] (4) Preparation of the top electrode: by therm...

Embodiment 3

[0049] A method for preparing a universal non-volatile write-once-read-many memory, comprising the following steps:

[0050] (1) Substrate treatment: Sonicate the silicon substrate with ethanol, isopropanol, and ethanol for 20 minutes, blow dry with nitrogen, and then treat it with an oxygen plasma cleaner at a power of 10W for 8 minutes.

[0051] (2) Preparation of the bottom electrode: Spin-coat a graphene oxide solution on a silicon wafer substrate first to obtain a large-area graphene oxide film, and then reduce it at a high temperature of 1200°C for 1 hour in an argon / hydrogen mixed atmosphere to obtain Reduced graphene oxide film.

[0052] (3) Preparation of the storage medium layer: Dissolve the insulating polymer PVP in an ethanol solution, and then spin-coat it on the bottom electrode. The rotation speed of the spin coater is 1200rpm, and dry it. The thickness of the storage medium layer is 65nm;

[0053] (4) Preparation of the top electrode: by thermal evaporation, ...

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Abstract

The invention discloses a universal non-volatile write-once-read-many memory and a preparation method thereof, belonging to the field of resistive memory. A non-volatile write-once-read-many memory with universality, including a substrate, on which there are bottom electrode, storage medium layer, and top electrode in sequence, and the storage medium layer is purely insulating A polymer layer and a method for its preparation are disclosed. The raw materials used in the present invention are easy to obtain and low in cost, and the prepared memory exhibits non-volatile write-once-read-many-time storage characteristics, and has the advantages of low write voltage, high switch ratio, low misread rate, and high stability .

Description

[0001] technical background [0002] The invention relates to the field of resistive memory, in particular to a universal non-volatile write-once-read-many memory and a preparation method thereof. Background technique [0003] Memory is one of the most basic components of electronic equipment and an important part of modern information technology. With the rapid development of modern information technology, the processing ability of data is continuously enhanced, and the amount of data is increasing rapidly. Therefore, people hope to obtain memory chips with excellent performance and low price to store massive amounts of data. In recent years, a new type of non-volatile memory (resistive memory) based on the change of device resistance value has the advantages of simple device structure, fast read and write speed, high endurance of erasing and writing, and long data retention time. Rapid development in the field of semiconductor storage. [0004] Among them, non-volatile wri...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01L45/00
CPCH10N70/25H10N70/881H10N70/011
Inventor 刘举庆陈洁黄维
Owner NANJING TECH UNIV
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