Novel direct-current busbar

Abstract

The present invention discloses a novel direct-current busbar. The novel direct-current busbar comprises absorption capacitors, energy storage capacitors, a positive pole, a negative pole and an insulating layer; the plurality of energy storage capacitors are arranged to form a ring-shaped structure; the plurality of the energy storage capacitors are connected in parallel; the positive pole is connected with one end of each of the energy storage capacitors; the other ends of the storage capacitors are connected with the negative pole; the insulating layer is stacked on the positive pole; the negative pole is stacked on the insulating layer; the plurality of absorption capacitors are arranged to form a ring-shaped structure; the absorption capacitors are located on the negative pole; the absorption capacitors are used for decreasing parasitic inductance; the plurality of absorption capacitors are connected in parallel; and the storage capacitors are connected in parallel with the absorption capacitors. With the novel direct-current busbar provided by the invention adopted, parasitic inductance in a power loop can be effectively decreased, and therefore, voltage and current overshoot of a silicon carbide power device during a switching process can be decreased, switching loss can be reduced, and the service life of the silicon carbide power device can be prolonged.

Description

technical field [0001] The invention relates to the technical field of power electronics, in particular to a novel DC busbar. Background technique [0002] In recent years, silicon carbide power semiconductor devices have gradually attracted people's attention because of their good material properties such as higher critical breakdown field strength, better thermal conductivity, low on-state resistance, and high switching frequency. Bipolar transistors (Insulated Gate Bipolar Transistor, IGBT), devices, silicon carbide power semiconductor devices have shorter switching times, lower switching losses, and can achieve higher switching frequencies, so they are often used in high-frequency high-power density converters In order to reduce the size of its output filter, thereby reducing the size, weight and volume of the entire power electronic device. [0003] In high-frequency converter applications, the commonly used SiC power semiconductor devices are SiC Metal-Oxide-Semicondu...

AI Technical Summary

Problems solved by technology

[0004] The purpose of the present invention is to provide a new type of DC busbar to solve the problem of drain-source voltage overshoot during the turn-off process of silicon carbide power MOSFET devices

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