The invention discloses a novel DC
busbar. The DC
busbar includes: absorbing capacitors,
energy storage capacitors, positive poles, negative poles, and an insulating layer; the
discharge positions of multiple
energy storage capacitors are in a ring structure, and multiple
energy storage capacitors are connected in parallel; the positive pole and One end of the energy storage
capacitor is connected; the other end of the energy storage
capacitor is connected to the negative
electrode; the insulating layer is stacked on the positive
electrode; the negative
electrode is stacked on the insulating layer; The
discharge position of the absorbing
capacitor is also in a ring structure; the absorbing capacitor is located on the negative pole; the absorbing capacitor is used to reduce parasitic
inductance; multiple absorbing capacitors are connected in parallel; the energy storage capacitor and the
Snubber capacitors are connected in parallel. The use of the DC
busbar provided by the present invention can effectively reduce the parasitic
inductance in the power loop, thereby reducing the
voltage and current overshoot of the
silicon carbide power device during the switching process, reducing switching loss, and improving the service life of the
silicon carbide power device.