Double-L shaped current sharing stress-resistant IGBT (insulated gate bipolar transistor) module busbar terminal

Abstract

The invention discloses a double-L shaped current sharing stress-resistant IGBT module busbar terminal which comprises an emitting electrode busbar and a collecting electrode busbar, wherein two L-shaped first pins are arranged below the emitting electrode busbar; two L-shaped second pins are arranged below the collecting electrode busbar; and the two L-shaped first pins and the two L-shaped second pins are positioned on an identical line when being welded. The terminal has the advantages of simple and compact structure, low cost, convenience in operation, good current sharing property, stress resistance and the like.

Description

technical field [0001] The invention mainly relates to the field of IGBT module design, in particular to a busbar terminal suitable for the IGBT module. Background technique [0002] As an important part of the IGBT module, the busbar terminal is an important part of the internal chip current convergence of the module, and it is also the main channel for connecting the internal circuit of the module to the external application circuit. The internal chips of the module are firstly interconnected on the lining board through welding process and wire bonding process, and then the busbar terminals are connected to the lead-out circuit of the lining board, and finally the chip interconnection on multiple lining boards is realized. Among them, one end of the collector busbar and the emitter busbar are welded to the corresponding circuit area of ​​the two lining boards, and the other end is led out of the module as a connection terminal for the external circuit. In order to achieve...

AI Technical Summary

Problems solved by technology

Since the welding point of the busbar on the liner 1 is not at the center of symmetry, the current distribution is uneven (the emitter busbar welding point 4 and the collector busbar welding point 5), and the IGBT chip is connected in parallel on the liner board, this Uneven current will lead to differences in the internal current of the chip, causing local overheating of the chip, and easily leading to chip failure

In other words, the planar busbar design makes the collector busbar welding point 5 and the emitter busbar welding point 4 deviate from the symmetrical center of the liner 1 to varying degrees, and the asymmetrical input and output of current weakens the symmetry of the liner 1 itself. characteristics, resulting in uneven current, affecting the reliability of the entire IGBT module

Images