Preparation method of ultraviolet LED and ultraviolet LED

An ultraviolet and equipment technology, applied in the field of ultraviolet LED, can solve the problems of low luminous efficiency and poor anti-life

Active Publication Date: 2017-09-22
EPITOP PHOTOELECTRIC TECH
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  • Abstract
  • Description
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  • Application Information

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Problems solved by technology

[0007] The embodiment of the present invention provides a preparation method of ultraviolet LED and ultraviolet LED, the purpose is to overcome the defects of traditional existing methods, solve the problems of low luminous efficiency and poor life resistance of traditional ultraviolet LED, improve the performance of ultraviolet LED devices, so as to achieve high Bactericidal efficiency

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  • Preparation method of ultraviolet LED and ultraviolet LED
  • Preparation method of ultraviolet LED and ultraviolet LED

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Embodiment Construction

[0027] In order to make the purpose, technical solutions and advantages of the embodiments of the present invention clearer, the technical solutions in the embodiments of the present invention will be clearly and completely described below in conjunction with the drawings in the embodiments of the present invention. Obviously, the described embodiments It is a part of embodiments of the present invention, but not all embodiments. Based on the embodiments of the present invention, all other embodiments obtained by persons of ordinary skill in the art without creative efforts fall within the protection scope of the present invention.

[0028] figure 1 It is a schematic flow chart of Embodiment 1 of the preparation method of the ultraviolet LED provided by the present invention. like figure 1 As shown, the method of this embodiment may include:

[0029] Step 11, pre-introducing metal sources and group V reactants on the substrate, decomposing at high temperature to form a buff...

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Abstract

The invention provides a preparation method of an ultraviolet LED and the ultraviolet LED. The preparation method comprises the following steps: introducing a metal source and a V-group reactant on a substrate, and decomposing to form a buffer layer under high temperature; increasing growth temperature, growing a non-doped AltGa1-tN layer and growing an N-type AluGa1-uN layer on the basis of the AltGa1-tN layer; adjusting the temperature to be a temperature for growing quantum wells, and growing an AlxGa1-xN/AlyGa1-yN multi-quantum well structure; growing an AlzGa1-zN electron barrier layer with the thickness of 5 to 100 nm on the grown AlxGa1-xN/AlyGa1-yN multi-quantum well structure; growing a P-type layer with high hole concentration and low ultraviolet absorption rate on the basis of the AlzGa1-zN electron barrier layer, wherein the P-type layer is an AlvGa1-vN/GaN superlattice structure, a P-type GaN layer with high dosage concentration is on the P-type layer to form a P-type ohmic contact layer. Through the embodiment of the invention, the absorption of the P-type layer for ultraviolet light emitted by the quantum wells can be effectively reduced, the luminous efficiency of the ultraviolet LED is improved, and the service life of the ultraviolet LED device can be prolonged.

Description

technical field [0001] The invention relates to a method for growing an ultraviolet light-emitting diode (Light-Emitting Diode; LED), in particular to a method for preparing an aluminum-gallium-nitride (ALGaN) ultraviolet LED with a p-type layer of low ultraviolet light absorption rate and the ultraviolet LED. Background technique [0002] With the progress of our country's scientific and technological level, the continuous development of the manufacturing industry, the living standard has also been continuously improved, and the material life and spiritual life have been greatly improved. However, the aggravation of smog and water pollution in recent years has added flaws to the ever-improving living standards, and the bacteria carried in the air and water are eroding our health. In order to protect one's own health, various disinfection and sterilization devices have been born, such as air purifiers and water processors. The main sterilizing functional components of these...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L33/06H01L33/32H01L33/00
CPCH01L33/007H01L33/06H01L33/32
Inventor 黄小辉周德保康建梁旭东
Owner EPITOP PHOTOELECTRIC TECH
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