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Fluorine-based ferromagnetic semiconductor material and preparation method thereof

A semiconductor and ferromagnetic technology, applied in the field of fluorine-based ferromagnetic semiconductor materials and their preparation, can solve the problems of inability to clearly study macroscopic physical properties, magnetic origin and working mechanism, inability to separately control, and harsh preparation process.

Active Publication Date: 2019-04-05
INST OF PHYSICS - CHINESE ACAD OF SCI
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0004] The preparation process of the dilute magnetic semiconductor (Ga,Mn)As or (In,Mn)As is very harsh, and only a non-chemically balanced film can be prepared, so it is impossible to clearly study its macroscopic physical properties, magnetic origin and working mechanism
Moreover, the magnetic moments and carriers of the dilute magnetic semiconductor (Ga,Mn)As or (In,Mn)As are provided by the same dopant ion Mn, so it is impossible to control the magnetic moments of (Ga,Mn)As or (In,Mn)As or (In,Mn)As respectively. ) Electricity and magnetism of As

Method used

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  • Fluorine-based ferromagnetic semiconductor material and preparation method thereof
  • Fluorine-based ferromagnetic semiconductor material and preparation method thereof
  • Fluorine-based ferromagnetic semiconductor material and preparation method thereof

Examples

Experimental program
Comparison scheme
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Embodiment 1

[0071] This embodiment provides a method for preparing a ferromagnetic semiconductor material, comprising the following steps:

[0072] 1) 2.547 g of BaAs powder, 3.506 g of BaF in a glove box filled with argon 2 powder, 2.224 grams of Zn powder, 1.498 grams of As powder, 0.330 grams of Mn powder and 0.912 grams of KAs powder are evenly mixed (the atomic content ratio of Ba:K:F:Zn:Mn:As is 0.8:0.2:1:0.85:0.15 : 1), the reactant is packed in the niobium tube, and the niobium tube is sealed under the protection of argon;

[0073] 2) Put the niobium tube containing the reactant into a quartz tube filled with argon gas at atmospheric pressure, and seal the quartz tube;

[0074] 3) Put the quartz tube in a high-temperature furnace and sinter at a temperature of 800°C for 20 hours;

[0075] 4) Grinding and mixing the block material obtained after sintering under the protection of argon, pressing it into tablets, putting it into a niobium tube and sealing it;

[0076] 5) put the n...

Embodiment 2

[0084] This embodiment provides a method for preparing a ferromagnetic semiconductor material, comprising the following steps:

[0085] 1) 2.547 g of BaAs powder, 3.506 g of BaF in a glove box filled with argon 2 powder, 2.355 grams of Zn powder, 1.498 grams of As powder, 0.22 grams of Mn powder and 0.912 grams of KAs powder are uniformly mixed (the atomic content ratio of Ba:K:F:Zn:Mn:As is 0.8:0.2:1:0.9:0.1 : 1), the reactant is packed in the niobium tube, and the niobium tube is sealed under the protection of argon;

[0086] 2) Put the niobium tube containing the reactant into a quartz tube filled with argon gas at atmospheric pressure, and seal the quartz tube;

[0087] 3) Put the quartz tube in a high-temperature furnace and sinter at a temperature of 850° C. for 20 hours;

[0088] 4) Grinding and mixing the block material obtained after sintering under the protection of argon, pressing it into tablets, putting it into a niobium tube and sealing it;

[0089] 5) Put the...

Embodiment 3

[0096] This embodiment provides a method for preparing a ferromagnetic semiconductor material, comprising the following steps:

[0097] 1) 2.547 g of BaAs powder, 3.506 g of BaF in a glove box filled with argon 2 powder, 2.420 grams of Zn powder, 1.498 grams of As powder, 0.165 grams of Mn powder and 0.912 grams of KAs powder are uniformly mixed (the atomic content ratio of Ba:K:F:Zn:Mn:As is 0.8:0.2:1:0.925:0.075 : 1), and the reactant is packed in the niobium tube, and the niobium tube is sealed under the protection of argon;

[0098] 2) Put the niobium tube containing the reactant into a quartz tube filled with argon gas at atmospheric pressure, and seal the quartz tube;

[0099] 3) Put the quartz tube in a high-temperature furnace and sinter at a temperature of 750° C. for 20 hours;

[0100] 4) Grinding and mixing the block material obtained after sintering under the protection of argon, pressing it into tablets, putting it into a niobium tube and sealing it;

[0101] 5...

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Abstract

The invention provides a fluorine-based ferromagnetic semiconductor material and a preparation method thereof, the chemical formula of the fluorine-based ferromagnetic semiconductor material is (Ba 1‑x K x )F(Zn 1‑y mn y )As, where x and y represent the atomic content, and 0.05≤x≤0.2, 0.025≤y≤0.15. The fluorine-based ferromagnetic semiconductor material of the invention is bulky, high in purity and good in stability; the carrier type is hole type and has negative magnetoresistance effect.

Description

technical field [0001] The invention relates to a magnetic semiconductor material, in particular to a fluorine-based ferromagnetic semiconductor material and a preparation method thereof. Background technique [0002] The magnetic semiconductor refers to the magnetic semiconductor formed after some cations in the non-magnetic semiconductor are replaced by magnetic transition metal ions or rare earth metal ions. Magnetic semiconductors have the properties of both semiconductors and magnetic materials, and are a new low-power semiconductor device that integrates magnetism, light, and electricity. The storage of information can be realized based on the magnetic moment of the magnetic semiconductor, and the processing of information can be realized based on the charge movement of the carriers in the magnetic semiconductor. Therefore, the magnetic (spin) electronic devices prepared by using magnetic semiconductors can realize the storage and processing of information at the same...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01F1/40H01L43/10
CPCH01F1/40H10N50/85
Inventor 靳常青陈碧娟邓正
Owner INST OF PHYSICS - CHINESE ACAD OF SCI
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