Ion implantation method and ion implantation device
An ion implantation and ion beam technology, which is applied in discharge tubes, semiconductor/solid state device testing/measurement, semiconductor devices, etc., to achieve the effect of accurate implantation angle distribution
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Deformed example 1
[0206] In the above-mentioned embodiment, the case where the implantation angle distribution in the two directions of the x direction and the y direction is evaluated by combining the surface channeling condition and the axial channeling condition is shown. In the modified example, only the surface channeling condition was used to evaluate the implantation angle distribution. Hereinafter, this modified example will be described mainly focusing on differences from the above-described embodiment.
[0207] Figure 20 (a), Figure 20 (b) is a diagram schematically showing the structure of the platen driving device 150 according to the modified example. The platen driving device 150 has a wafer holding unit 152 , a reciprocating mechanism 154 , a twist angle adjustment mechanism 156 , a first tilt angle adjustment mechanism 157 , and a second tilt angle adjustment mechanism 158 . The platen driving device 150 can adjust the twist angle φ, the first tilt angle θ1, and the second ...
Deformed example 2
[0214] In the above-described embodiments, when evaluating the implantation angle distribution of ion beams under various beam conditions, different wafers are used for each condition. In this modified example, ion beams with different beam conditions are irradiated to one wafer to evaluate the implantation angle distribution. Specifically, a plurality of regions are set on the main surface of one wafer, and beams with different conditions are irradiated for each region to evaluate wafer characteristics for each region. Hereinafter, this modified example will be described mainly focusing on differences from the above-described embodiment.
[0215] Figure 23 (a)~ Figure 23 (d) is a schematic representation of the setting on the evaluation wafer W T A map of multiple regions on the main surface of the wafer. Figure 23 (a) shows an example in which the main surface of the wafer is divided into upper and lower sides (y direction), and the first region S1 is set on the upper...
Deformed example 3
[0224] In the above-described embodiments and modified examples, an example of evaluating the implantation angle distribution of the ion beam irradiated on the wafer by reciprocating scanning in the scanning direction was shown. In yet another modification, the evaluation method described above can also be applied to a so-called ribbon beam having a wide range of beam spots in the x direction. In this case, it is preferable to set each region so that a plurality of regions are arranged along the y direction perpendicular to the x direction in which the strip-shaped beam extends.
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